ZnO is a II-VI compound semiconductor with a bandgap energy of 3.4 eV.
It is a potential material since it has advantages, large exciton binding energy
of 60 meV, transparent in visible region, easy to obtain n-type conductivity, an abundant and
none-toxic material. We are investigating ZnO films and nanoparticles for the
applications of high efficiency UV light emitters (LEDs for solid sate
lightning, UV LDs), devices using transparent conductive films and nano-bio,
- Growth of ZnO
epitaxial films by MOCVD
R&D Laboratories-I, Nippon Steel Corporation
He was engaged in the development of HgCdTevfilms for infrared detectors
||Senior researcher, Electronics laboratory, Nippon Steel Corporation
He was engaged in the development of AlGaAs LDs and ZnSe blue-green semiconductor
LDs by MOCVD.
||Senior researcher, Advanced Research Laboratories, Nippon Steel Corporation
He was engaged in the research for heteroepitaxial growth of GaAs on Si
for FETs by MOCVD.
||Senio researcher LSI division, Nippon Steel Corporation
He was engaged in the development of interlayer dielectric for ULSI by
high density plasma CVD.
||Associate professor Interdisciplinary Faculty of Science and Engineering,
He was engaged in the research of ZnO films by MOCVD and nanoparticles
by gas evaporation technique for opto-electronic devices.
||Professor Interdisciplinary Faculty of Science and Engineering,
He was engaged in the research of ZnO films and nanoparticles for opto-electronic
device and nano-biomedical applications.