73 Y. Kajikawa
"Refined analysis of low-temperature data of Hall-effect measurements on Sb-doped n-type Ge on the basis of an impurity-Hubbard-band model"
Physica Status Solidi C 14 (2017) 1700151 (12 pages).

72 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of twin generation in the growth of GaAs on Ge(111) substrates"
Journal of Crystal Growth 477 (2017) pp.40-44.

71 Y. Kajikawa
"Analysis of low-temperature data of Hall-effect measurements on Ga-doped p-type Ge on the basis of an impurity-Hubbard-band theory"
Physica Status Solidi C 14 (2017) 1700071 (9 pages).

70 Y. Kajikawa
"Analysis of low-temperature data of Hall-effect measurements on p-type InP using a small polaron theory"
Physica Status Solidi C 14 (2017) 1600217 (12 pages).

69 Y. Kajikawa
"Analysis of the experimental data for impurity-band conduction in Mn-doped InSb"
Physica Status Solidi C 14 (2017) 1600215 (5 pages).

68 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
Physica Status Solidi C 14 (2017) 1600129 (6 pages).

67 Y. Kajikawa
"Two acceptor levels and hopping conduction in Mn-doped GaAs "
Japanese Journal of Applied Physics 56 (2017) 011201 (8 pages).

66 Y. Kajikawa
"Analysis of the Hall-effect data on Mn-doped GaAs with taking into account the Hall factor for nearest-neighbor hopping conduction"
Physica Status Solidi C 13 (2016) pp.387-394.

65 Y. Kajikawa
"Multi-band analysis of temperature-dependent transport coefficients (conductivity, Hall, Seebeck, Nernst) of Ni-doped CoSb3"
Journal of Applied Physics 119 (2016) 055702 (8 pages).

64 Y. Kajikawa
"Multi-band analysis of thermoelectric properties of n-type Co1-xNixSb3 (0x0.01) over a wide temperature range of 10-773 K"
Journal of Alloys and Compounds 664 (2016) pp.338-350.

63 F
dgƓdqg̑Ή
w̕ 21(2015) pp.151-152.

62 Y. Kajikawa
"Strong temperature dependence of the Hall factor of p-type CoSb3 : A re-analysis incorporating band nonparabolicity"
Journal of Applied Physics 117 (2015) 055702 (7 pages).

61 Y. Kajikawa
"Refined analysis of the transport properties of Co1-xNixSb3 according to a model including a deep donor level and the second lowest valleys of the conduction band"
Journal of Alloys and Compounds 621 (2015) pp.170-178.

60 Y. Kajikawa
"Effects of impurity-band conduction on thermoelectric properties of lightly doped p-type CoSb3"
Journal of Applied Physics 116 (2014) 153710 (8 pages).

59 Y. Kajikawa
"Analysis of high-temperature thermoelectric properties of p-type CoSb3 within a two-valence-band and two-conduction-band model"
Journal of Applied Physics 115 (2014) 203716 (9 pages).

58 Y. Kajikawa, K. Okamura, T. Okuzako, and Y. Matsui
"Thickness dependence of electrical properties of polycrystalline GaSbAs thin films grown on glass substrates: Analysis on the basis of a two-band conduction model using a differential Hall-effect method"
Thin Solid Films 545 (2013) pp.161-170.


57 Y. Kajikawa
"Effects of potential barrier height and its fluctuations at grain boundaries on thermoelectrical properties of polycrystalline semiconductors"
Journal of Applied Physics 114 (2013) 053707 (10 pages).

56 Y. Kajikawa
"Effects of grain boundary potential barrier height and its fluctuation on conductivity of polycrystalline semiconductors in the ionized-impurity scattering dominated case"
Journal of Applied Physics 114 (2013) 043719 (8 pages).

55 Y. Kajikawa, T. Okuzako, Y. Matsui
"Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers"
Journal of Crystal Growth 378 (2013) pp.77-80.

54 Y. Kajikawa
"Conduction model covering non-degenerate through degenerate polycrystalline semiconductors with non-uniform grain-boundary potential heights based on an energy-filtering model"
Journal of Applied Physics 112 (2012) 123713 (8 pages).

53 Y. Kajikawa, K. Okamura, Y. Inoko, and H. Mizuki
"Analysis of temperature dependence of electrical conductivity in degenerate n-type polycrystalline InAsP films in an energy-filtering model with potential fluctuations at grain boundaries"
Journal of Applied Physics 112 (2012) 123712 (8 pages).


52 Y. Kajikawa and K. Okamura
"Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition"
Physica Status Solidi C 9, No.2, (2012) pp.274-277.


51 Y. Kajikawa
"Analytical and numerical studies on strain and crystal-orientation effects on the valence bands in hexagonal semiconductor layers and quantum wells"
Superlattices and Microstructures 51 (2012) pp.16-52.

50 Y. Kajikawa, Y. Iseki, and Y. Matsui
"X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault density"
Proceedings of The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011) pp.169-171.

49 T. Okuzako, K. Okamura, Y. Matsui, K. Nakaya, and Y. Kajikawa
"Molecular-beam deposition of polycrystalline GaSbAs thin films at a low substrate temperature of 300"
Physica Status Solidi C 8, No.2, (2011) pp.266-268.


48 Y. Kajikawa, T. Okuzako, S. Takami, and M. Takushima
"Electrical properties of polycrystalline GaInAs thin films"
Thin Solid Films 519 (2010) pp.136-144.


47 T.Okuzako, Y.Torii, and Y. Kajikawa,
"Mechanism of Electrical Conduction in Polycrystalline InGaAs Films"
 Proceedings of 6th Thin Film Materials & Devices Meeting. November 2-3, 2009, Kyoto, Japan. 100228051-1-6. http://www.tfmd.jp/


46 Y. Kajikawa,
"Effective masses of holes in non-(001) ultrathin Si layers"
  Journal of Applied Physics vol.106 (2009) 063712.

45 K. Ohnishi, M. Shiba,M. Yamakage and Y. Kajikawa,
"Refractive index of TlGaAs"
 Physica Status Solidi C vol.5 (2008) pp. 2932-2934.

44. M. Takushima and Y. Kajikawa,
"Excess As in Low-Temperature Grown InAs"
 Physica Status Solidi C vol.5 (2008) pp. 2781-2783.

43. M. Takushima, Y. Kajikawa, Y. Kuya, M. Shiba, and K. Ohnishi
"Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition"
Japanese Journal of Applied Physics vol.47 (2008) pp. 1469-1472.

42. M. Shiba, R. Ikariyama, M. Takushima, and Y. Kajikawa
"Properties of low-temperature grown InAs and their changes upon annealing"
Journal of Crystal Growth vol.301-302 (2007) pp.256-259.

41. M. Takushima, N. Kobayashi, Y. Yamashita, Y. Kajikawa, Y. Satou, Y. Tanaka, and N. Sumida
"Thallium incorporation during TlInAs growth by low-temperature MBE"
Journal of Crystal Growth vol.301-302 (2007) pp.117-120.

40. K. Ohnishi, T. Kanda, H. Kiriyama, and Y. Kajikawa
"Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE"
Journal of Crystal Growth vol.301-302 (2007) pp.113-116.

39. Y. Kajikawa, N. Nishimoto, D. Fujioka, and K. Ichida,
"Effect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells"
Japanese Journal of Applied Physics vol.45 (2006) pp. 2412-2416

38. Y. Kajikawa, N. Kobayashi, and H. Terasaki,
"Limits in growing TlGaAs/GaAs quantum well structures by molecular-beam epitaxy",
Materials Science & Technology B, vol.126, no.1, pp.86-92, 2005

37. Y. Kajikawa, N. Nishimoto, and Y. Higuchi,
"Large change in biaxial anisotropy of in-plane hole dispersion in a (110) quantum well under [110] uniaxial sress",
Phys. Rev. B, vol.69, no.20, pp.205320-205328, 2004

36. N. Nishimoto, N. Kobayashi, N. Kawasaki, Y. Higuchi, and Y. Kajikawa,
"Low-temperature MBE growth of a TlGaAs/GaAs multiple quantum-well structure",
IEICE Trans. Electron., vol.E86-C, no.10, pp.2082-2084, 2003

35. M.Mashita, T.Numata, H.Nakazawa, Y.Kajikawa, B.H.Coo, H.Makino, T.Yao
"Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs (111)A Substrates"
Japanese Journal of Applied Physics vol.42 (2003) pp. L807-809

34. Y.Kajikawa, N.Kobayashi, N.Nishimoto
"Effects of As pressure and growth temperature on the growth of TlGaAs films by molecular-beam epitaxy"
Journal of Applied Physics vol.93, no.5, pp.2752-2757, 2003

33. Y.Kajikawa, M.Kametani, N.Kobayashi, N.Nishimoto, and Y.Yodo
"Effect of Tl content on the growth of TlGaAs films by low-temperature molecular-beam epitaxy",
Journal of Applied Physics vol.93, no.3, pp.1409-1416, 2003

32. Kajikawa Y, Kubota H, Asahina S, and Kanayama N,
"Growth of TlGaAs by low-temperature molecular-beam epitaxy",
Journal of Crystal Growth vol.237/239 (2002) pp.1495-1498.

31. Kajikawa Y,
"Influence of barrier layers on optical anisotropy of (110)-oriented strained quantum wells",
Japanese Journal of Applied Physics 41 (2002) pp.982-986.

30. Kajikawa Y, Asahina S, and Kanayama N,
"X-ray diffraction measurements on lattice mismatch of InTlAs grown on InAs substrates",
Japanese Journal of Applied Physics 40 (2001) pp.28-33.

29. Kizuki H, Kouji Y, Hayafuji N and Kajikawa Y,
"Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers",
Journal of Crystal Growth 209 (2000) pp.440-444 .

28. Kajikawa Y,
"Optical anisotropy of (11l)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band",
Journal of Applied Physics 86 (1999) pp. 5663-5677 [Errata; 88 (2000) p.3784].

27. Kizuki H, Kajikawa Y, Hisa Y and Mihashi Y,
"Observation of quasiperiodic faceting both on MOCVD-grown and on gas-etched surfaces of vicinal (110) GaAs substrates",
Journal of Crystal Growth 194 (1998) pp.277-285.

26. Kizuki H, Miyashita M, Kajikawa Y, and Mihashi Y,
"Time-resolved photoluminescence study on a hetero-interface formed by direct regrowth of GaAs on an Al0.3Ga0.7As surface prepared by an in situ HCl gas etching process",
Japanese Journal of Applied Physics 36 (1997) pp.6290-6294.