0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000

129 Y. Kajikawa
"Effects of impurity Hubbard bands on the Hall effect in n-InP"
The 46th International Symposium on Compound Semiconductors, May 21, 2019, Nara, Japan, TuP-E-8.

128 Y. Kajikawa, M. Nishigaichi, M. Inoue, M. Kayano
"Effects of Bi irradiation for the MBE growth of GaSb on Ge (111) vicinal substrates"
The 46th International Symposium on Compound Semiconductors, May 21, 2019, Nara, Japan, TuP-A-7.

127 ¼Š_“à—ÈCˆäã«‘åCŠ–ì[‹KCŠì–õ—F
Ge(111)”÷ŒXŽÎŠî”Âã‚Ö‚ÌGaSb‚ÌMBE¬’·‚É‚¨‚¯‚éBiƒT[ƒtƒ@ƒNƒ^ƒ“ƒg‚ÌŒø‰Ê
‘æ1‰ñŒ‹»HŠwúIISYSE ‡“¯Œ¤‹†‰ï (2P03) 2018.11.29

126 Šì–õ—F
nŒ`GaAs‚É‚¨‚¯‚é•sƒ•¨“`“±‚̃nƒo[ƒhƒoƒ“ƒhƒ‚ƒfƒ‹‚É‚æ‚é‰ðÍ
2018”Nt‹G‰ž—p•¨—Šw‰ï@(19p-F202-3) 2018.3.19

125 M. Nishigaichi, S. Tenma, K. Kato, S. Katsube, Y. Kajikawa
"Suppression of twin generation in the growth of InGaAs on Ge (111)"
The 29th International Conference on Defects in Semiconductors (ICDS2017), August 3, 2017, Matsue, Japan, ThP-24.

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”Âã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘å‘CX—º‰îCŠì–õ—F
Ge(111)Šî”Âã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚Ì‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”Âã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘å‘CX—º‰îCŠì–õ—F
Ge(111)Šî”Âã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚Ì‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚ÌÅ‹ßÚƒzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”Âã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘å‘CX—º‰îCŠì–õ—F
Ge(111)Šî”Âã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

113 T. Hayase, Y. Kajikawa, and W. Yeh
"Analysis of temperature dependence of electrical properties of sputter-epitaxy grown Ge on Si"
11th Thin Film Materials & Devices Meeting, October 31, 2014, Kyoto, Japan. http://www.tfmd.jp/


112 Šì–õ—F
’ቷ‚Å‚ÌpŒ^CoSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ
2014”NH‹G‰ž—p•¨—Šw‰ï@(18p-A7-2) 2014.9.18

111 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ð̸͂–§‰»
2014”NH‹G‰ž—p•¨—Šw‰ï@(18p-A7-1) 2014.9.18

110 Šì–õ—F
pŒ^CoSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚ÌŒ©’¼‚µ
2014”Nt‹G‰ž—p•¨—Šw‰ï@(19a-F11-1) 2014.3.19

109 Šì–õ—F
ƒCƒIƒ“‰»•sƒ•¨ŽU—‚ªŽx”z“I‚È”¼“±‘Ì‘½Œ‹»‚Ì“±“d—¦‚ɑ΂·‚éƒ|ƒeƒ“ƒVƒƒƒ‹á•Ç‚‚³‚Ì‚ä‚炬‚̉e‹¿
2013”Nt‹G‰ž—p•¨—Šw‰ï@(28p-F2-2) 2013.3.28


108 Šì–õ—F
”M‹N“d—Ío—͈öŽq‚ɑ΂·‚éƒ|ƒeƒ“ƒVƒƒƒ‹á•Ç‚‚³‚Ì‚ä‚炬‚̉e‹¿
2013”Nt‹G‰ž—p•¨—Šw‰ï@(27p-B9-1) 2013.3.27

107 Y. Kajikawa, T. Okuzako, and Y. Matsui 
Effects of the GaSbAs buffer layer on the properties of the polycrystalline InAs layer on glass
The 17th international symposium on molecular beam epitaxy(MBE2012) 2012.9.24
MoP-8

106 Šì–õ—F
k‘Þ‚µ‚½Si‘½Œ‹»”––Œ‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ
2012”NH‹G‰ž—p•¨—Šw‰ï@(13p-PB12-6) 2012.9.13

105 Šì–õ—F
k‘Þ‚µ‚½II-VI‘°‘½Œ‹»”––Œ‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ
2012”NH‹G‰ž—p•¨—Šw‰ï@(13a-H8-11) 2012.9.13

104 Šì–õ—FC‰ª‘ºŒ’‘¾C’–Žq—S‹M
k‘Þ”¼“±‘Ì‘½Œ‹»‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ-‚h‚Ž‚o‚`‚“‘½Œ‹»‚Ö‚Ì“K—p-
2012”Nt‹G‰ž—p•¨—Šw‰ï@(17p-DP3-3) 2012.3.17

103 Šì–õ—F
GaN‚̉¿“dŽq‘тɑ΂·‚é”ñ‹É«–Ê“à‚̘c‚Ý‚ÌŒø‰Ê
2012”Nt‹G‰žEp•¨—Šw‰ï@(16p-DP1-11) 2012.3.16


102 ‰ª‘ºŒ’‘¾C…–Ø°–çCŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚Ö•ªŽqüö’…‚µ‚½‚h‚Ž‚o‚`‚“‚Ì“d‹C“I“Á«
2011”NH‹G‰ž—p•¨—Šw‰ï@(30‚-‚yA-10) 2011.8.30

101 ‰œ”—‘ñ–çC¼ˆä—Ç‹LCŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚Ì‚h‚Ž‚`‚“‘½Œ‹»‘w‚Ì“Á«‚ɑ΂·‚éGaSbAsƒoƒbƒtƒ@‘w‚ÌŒø‰Ê
2011”NH‹G‰ž—p•¨—Šw‰ï@(30‚-‚yA-9) 2011.8.30

100 Y. Kajikawa and K.Okamura 
Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition
The 38th international symposium on Compound Semiconductors (iscs2011) 2011.5.24

99 Y. Kajikawa, Y. Iseki, and Y. Matsui
X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault density
The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011) 2011.5.24.

98 ‰ª‘ºŒ’‘¾CŠì–õ—F
GaSb‹y‚ÑGaAsSb‘½Œ‹»”––Œ‚É‚¨‚¯‚é•sƒ•¨“`“±
2011”Nt‹G‰ž—p•¨—Šw‰ï@(25p-BA-8) 2011.3.25

97 ˆäŠÖNGC¼ˆä—Ç‹LCŠì–õ—F
•ªŽqüö’…‚µ‚½InP‹y‚ÑInAs‘½Œ‹»”––Œ‚ÌÏ‘wŒ‡Š×–§“x‚Ì„’è
2011”Nt‹G‰ž—p•¨—Šw‰ï@(25p-BA-9) 2011.3.25


96 Šì–õ—F
“`“±‘Ñ‚Ì”ñ•ú•¨ü«‚ÆFermi-Dirac•ª•z‚ðl—¶‚µ‚½—±ŠEŽU—ˆÚ“®“x‚̉ðÍ
2010”NH‹G‰ž—p•¨—Šw‰ï@(16a-NH-7) 2010.9.16

95 ‰ª‘ºŒ’‘¾C‰œ”—‘ñ–çC¼ˆä—Ç‹ICŠì–õ—F
•ªŽqüö’…‚µ‚½GaAsSb‘½Œ‹»”––Œ‚Ì“d‹C“I“Á«‚̉·“xˆË‘¶«
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2010”N“xŽx•”Šwpu‰‰‰ï(Da1-2) 2010.7.31

94 T. Okuzako, K.Okamura, Y. Matsui, K. Nakaya, and Y. Kajikawa
Molecular-Beam Deposition of Polycrystalline GaSbAs Thin Films on G‚Œass and Plastic Substrates
The 37th International symposium on Compound Semiconductors (iscs2010) 2010.5.31-6.4

93 Šì–õ—F
˜Z•û»”¼“±‘Ì—ÊŽqˆäŒË‚É‚¨‚¯‚é³E‚Ì—ÊŽq•Â‚¶ž‚ߎ¿—Ê
2010”Nt‹G‰ž—p•¨—Šw‰ï@(18a-TM-21) 2010.3.18

92 ‰œ”—‘ñ–çC‰ª‘ºŒ’‘¾C¼ˆä—Ç‹LC’†’JŒö—ºCŠì–õ—F
ƒKƒ‰ƒXŠî”‚¨‚æ‚уvƒ‰ƒXƒ`ƒbƒNŠî”Âã‚Ö‚ÌGaSbAs‘½Œ‹»”––Œ‚ÌMBE¬’·
2010”Nt‹G‰ž—p•¨—Šw‰ï@(18a-TW-5) 2010.3.18

91 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çCŠì–õ—F
GaInAs‘½Œ‹»”––Œ‚Ì“d‹C“IŒõŠw“I“Á«
“dŽqî•ñ’ÊMŠw‰ï@“dŽqƒfƒoƒCƒXŒ¤‹†‰ï (ED2009-139) 2009.11.19

90 ‰œ”—‘ñ–çC’¹‹‹`eCŠì–õ—F
InGaAs‘½Œ‹»”––Œ‚É‚¨‚¯‚é“d‹C“`“±‹@\
”––ŒÞ—¿ƒfƒoƒCƒXŒ¤‹†‰ï‘æ6‰ñŒ¤‹†W‰ï@(2P-55) 2009.11.2

89 Šì–õ—F
Si(11
l)–Ê‹É”–SOIpMOSFET\‘¢‚É‚¨‚¯‚é³E‚Ì—ÊŽq•Â‚¶ž‚ߎ¿—Ê
2009”NH‹G‰ž—p•¨—Šw‰ï@(8p-TB-8) 2009.9.8

88 ‰œ”—‘ñ–çCŠì–õ—FC‘³®C‚Œ©T–ç
InGaAs‘½Œ‹»”––Œ‚É‚¨‚¯‚é“d‹C“`“±‹@\
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2009”N“xŽx•”Šwpu‰‰‰ï(Ea-3) 2009.8.1

87 Šì–õ—F
III-V‘°‰»‡•¨”¼“±‘̂̃tƒŒƒLƒVƒuƒ‹ƒfƒoƒCƒX‰ž—p‚̉”\«
‰ž—p•¨—Šw‰ï‰ž—p“dŽq•¨«•ª‰È‰ïŒ¤‹†—á‰ï@2009.5.22

86 Šì–õ—F
Si(110)—ÊŽqˆäŒË‚É‚¨‚¯‚é³E—LŒøŽ¿—Ê
2009”Nt‹G‰ž—p•¨—Šw‰ï@(1a-P13-4) 2009.4.1

85 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çC‘³®CŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚ÖMBE¬’·‚µ‚½GaInAs‚ÌŒõŠw“I“Á«
2009”Nt‹G‰ž—p•¨—Šw‰ï@(31p-TF-6) 2009.3.31


84 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çC‘³®C‘弘a‹`C‰œE—‘ñ–çCŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚ÉMBE¬’·‚µ‚½GaInAs‚ÌŒõŠw“I“Á«
“‡ª‘åŠw‘‡—HŠw•”‹I—vDƒVƒŠ[ƒYA vol.42 2009.2.17 http://ap09.lib.shimane-u.ac.jp/article.php?flag=j&output=csv&arid=6996


83 Šì–õ—FC‘³®C‚Œ©T–çC’¹‹‹`eC‰œ”—‘ñ–çC‘åè–«
ƒKƒ‰ƒXŠî”Âã‚ÖMBE¬’·‚µ‚½InGaAs‘½Œ‹»‚Ì“d‹C“I“Á«(II)@|‰·“x•Ï‰»|
2008”NH‹G‰ž—p•¨—Šw‰ï@(4a-ZD-7) 2008.9.4

82 ’¹‹‹`eA‘³®A‚Œ©T–çA‘弘a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚ÖMBE¬’·‚µ‚½GaInAs‘½Œ‹»‚ÌŒõŠw“I“Á«
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2008”N“xŽx•”Šwpu‰‰‰ï(Fa-03) 2008.8.2

81 ‚Œ©T–çA‘³®A’¹‹‹`eAŠì–õ—F
ƒKƒ‰ƒXŠî”Âã‚ÖMBE¬’·‚µ‚½InGaAs‘½Œ‹»‚Ì“d‹C“I“Á«
2008”Nt‹G‰ž—p•¨—Šw‰ï@(29a-ZT-7) 2008.3.29

80 ‘³®A‹v‰Æ˜ÐA‘弘a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”‹y‚уvƒ‰ƒXƒ`ƒbƒNŠî”Âã‚Ö‚Ì•ªŽqüö’…–@‚É‚æ‚éInAs‚̒ቷ¬’·
”––ŒÞ—¿ƒfƒoƒCƒXŒ¤‹†‰ï‘æ‚S‰ñŒ¤‹†W‰ï@(P-39) 2007.11.2

79 M. Takushima, and Y. Kajikawa
Excess As in low-temperature Grown InAs
The 34th international symposium on Compound Semiconductors (iscs2007) 2007.10.15-10.18.

78 K. Ohnishi, M. Shiba, M. Yamakage, and Y. Kajikawa
Refractive Index of TlGaAs
The 34th international symposium on Compound Semiconductors (iscs2007) 2007.10.15-10.18.

77 M. Takushima, Y. Kajikawa, Y. Kuya, M. Shiba, and K. Ohnishi
Low-temperature growth of InAs on glass and plastic film substrates by molecular-beam deposition
The 19th International Conference on Indium Phosphide and Related Materials (IPRM'07) 2007.5.15-5.16.

76 ‘³®A‹v‰Æ˜ÐA‘弘a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”‹y‚уvƒ‰ƒXƒ`ƒbƒNŠî”Âã‚Ö‚ÌInAs‚̒ቷ¬’·
2007”Nt‹G‰ž—p•¨—Šw‰ï@(30a-Q-7) 2007.3.30

75 ‘弘a‹`AŽz”g«ŠóAŽRˆü–³ìAŠì–õ—F
TlGaAs”––Œ‚Ì”½ŽËƒXƒyƒNƒgƒ‹‘ª’è
2007”Nt‹G‰ž—p•¨—Šw‰ï@(29p-Q-4) 2007.3.29

74 M. Shiba, R. Ikariyama, M. Takushima, and Y. Kajikawa
Properties of low-temperature grown InAs and their changes upon annealing
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.6

73 M. Takushima, N. Kobayashi, Y. Yamashita, Y. Kajikawa, Y. Satou, Y. Tanaka, and N. Sumida
Thallium incorporation during TlInAs growth by low-temperature MBE
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.7

72 K. Ohnishi, T. Kanda, H. Kiriyama, Y. Kajikawa, S. Tamoto, and T. Narusawa
Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.4

71 “c–{WŒáAªˆø‘ñ–çAŠì–õ—FA¬‘ò’‰
RBS/Channeling–@‚É‚æ‚é’ቷ¬’·TlGaAs‚ÌŒ‹»«•]‰¿
2006”NH‹G‰ž—p•¨—Šw‰ï@(29a-B-7) 2006.8.29

71 “c–{WŒáAªˆø‘ñ–çAŠì–õ—FA¬‘ò’‰
RBS/Channeling–@‚É‚æ‚é’ቷ¬’·TlGaAs‚ÌŒ‹»«•]‰¿
•½¬18”N“x@‘æ15‰ñ“ú–{Þ—¿Šw‰ïu‰‰‘å‰ï 2006.6.24

70 ’ôŽR—‹†A‘³®AŠì–õ—F
’ቷ¬’·InAs‚Ì“d‹C“I“Á«‚Æ‚»‚̃Aƒj[ƒ‹‚É‚æ‚é•Ï‰»
2006”Nt‹G‰ž—p•¨—Šw‰ï@(25a-T-6) 2006.3.25

69 Šì–õ—FA‘³®A’ôŽR—‹†AŽz”g«Šó
’ቷ¬’·InAs‚ւ̃Aƒj[ƒ‹‚̉e‹¿
2005”NH‹G‰ž—p•¨—Šw‰ï@(11a-ZQ-3) 2005.9.11

68 Žz”g«ŠóA‘³®A’ôŽR—‹†AŠì–õ—F
’ቷ¬’·InAs‚ւ̃Aƒj[ƒ‹‚̉e‹¿
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2005”N“xŽx•”Šwpu‰‰‰ï 2005.7.30

67 Šì–õ—FA¼–{®ŒÈA“¡‰ª‘å•ãAŽs“cŒj–ç
’ቷMBE¬’·InGaAs/GaAs—ÊŽqˆäŒË‚̃tƒHƒgƒ‹ƒ~ƒlƒbƒZƒ“ƒX‚ɑ΂·‚é‹}‘¬‰Á”Mˆ—‚ÌŒø‰Ê
2005”Nt‹G‰ž—p•¨—Šw‰ï@(1a-ZM-3) 2005.4.1

66 Šì–õ—F
’ቷGaAsCInAs‚É‚¨‚¯‚éTl‚̌ŗnŒÀŠE
2004”Nt‹G‰ž—p•¨—Šw‰ï@(29p-ZX-5) 2004.3.29

65 ¼–{®ŒÈAŠì–õ—F
(110)—ÊŽqˆäŒË‚É‚¨‚¯‚é³E—LŒøŽ¿—ʂ̘c‚Ý‚É‚æ‚é•Ï‰»
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘Žx•”EŽl‘Žx•”C2003”N“xŽx•”—á‰ï 2003.8.2

64 ¬—ÑM—TA¼–{®ŒÈAŠì–õ—F
TlGaAs/GaAs‘½d—ÊŽqˆäŒË\‘¢‚̒ቷMBE¬’·
‰žEp•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘Žx•”EŽl‘Žx•”C2003”N“xŽx•”—á‰ï 2003.8.2

63 ”óŒû‹±–¾A¼–{®ŒÈAŠì–õ—F
(110)˜c‚Ý—ÊŽqˆäŒË‚É‚¨‚¯‚é³E—LŒøŽ¿—Ê
2003”Nt‹G‰ž—p•¨—Šw‰ï@(30p-ZE-6) 2003.3.30

62 ìè’¼sA¬—ÑM—TA”óŒû‹±–¾A¼–{®ŒÈAŠì–õ—F
TlGaAs/GaAs‘½d—ÊŽqˆäŒË\‘¢‚̒ቷMBE¬’·
2003”Nt‹G‰ž—p•¨—Šw‰ï@(29p-YA-16) 2003.3.29

61 ¼–{®ŒÈA¬—ÑM—TAŠì–õ—F
’ቷMBE¬’·‚É‚¨‚¯‚éTlGaAs‚̃Gƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú (2) -¬’·‰·“x‚ÆAsˆ³‚̉e‹¿-
“d‹CEî•ñ’ÊMŠw‰ï’†‘Žx•”‘æ53‰ñ˜A‡‘å‰ï 2002.10.19

60 ¬—ÑM—TA¼–{®ŒÈAŠì–õ—F
’ቷMBE¬’·‚É‚¨‚¯‚éTlGaAs‚̃Gƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú (1)@-Tl‘g¬ˆË‘¶«-
“d‹CEî•ñ’ÊMŠw‰ï’†‘Žx•”‘æ53‰ñ˜A‡‘å‰ï 2002.10.19

59 ¬—ÑM—TAŠì–õ—FA¼–{®ŒÈ
’ቷMBE¬’·TlGaAs‚É‚¨‚¯‚éƒGƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú‚Ì‘g¬ˆË‘¶«
“dŽqî•ñ’ÊMŠw‰ï@“dŽq•”•iEÞ—¿Œ¤‹†‰ï 2002.10.11

58 Šì–õ—FA¬—ÑM—TA¼–{®ŒÈ
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éŠî”‰·“x‚ÆAsˆ³‚̉e‹¿
2002”NH‹G‰ž—p•¨—Šw‰ï@(26p-YD-2) 2002.9.26

57 Šì–õ—FA‹T’J‰ëLA¬—ÑM—TA¼–{®ŒÈA—„—Dz
GaAsŠî”Âã‚ÌTlGaAs’ቷMBE¬’·‚É‚¨‚¯‚é’PŒ‹»¬’·‚ÌŒÀŠE–ŒŒú
2002”Nt‹G‰ž—p•¨—Šw‰ï@(30a-ZQ-4)@2002.3.30

56 Šì–õ—FA‹v•Û“c_bC’©”ä“ÞGˆê
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éTl•ªŽqü—ʂ̉e‹¿
2001”NH‹G‰ž—p•¨—Šw‰ï@(13p-T-11)@2001.9.13

55 Kajikawa Y, Kubota H, Asahina S, and Kanayama N
Growth of TlGaAs by low-temperature molecular-beam epitaxy
The 13th International Conference on Crystal Growth, Kyoto, Japan, 04a-SB3-05, 2001.8.4

54 Kajikawa Y
Effects of the Barrier Height on Optical Anisotropy of (110)-Oriented Strained Quantum Wells
13th International Conference on Indium Phosphide and Related Materials, Nara, Japan, WP-05, 2001.5.16

53 Šì–õ—FA‹v•Û“c_bC’©”ä“ÞGˆê
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éAsˆ³‚̉e‹¿
2001”Nt‹G‰ž—p•¨—Šw‰ï@(29a-G-6)@2001.3.29

52 Šì–õ—FA‹v•Û“c_bC’©”ä“ÞGˆê
GaAsŠî”Âã‚Ö‚ÌTlGaAs‚ÌMBE¬’·
2000”NH‹G‰ž—p•¨—Šw‰ï@(4p-ZA-13)@2000.10.4

51 Šì–õ—FA’©”ä“ÞGˆê
InAsŠî”Âã‚ÉMBE¬’·‚µ‚½InTlAs‚ÌXü‰ñÜ‘ª’è
2000”Nt‹G‰ž—p•¨—Šw‰ï@(28a-P3-3)@2000.3.28

50 H. Kizuki, Y. Kouji, N. Hayafuji, and Y. Kajikawa
Quasi-persistent photoconductivity of double heterojunction pseudomorphic high electron mobility transistor epitaxial wafers
7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, Th4-19, 1999.7.27

49 Šì–õ—F
‚Ђ¸‚Ý—ÊŽqˆäŒË‚É‚¨‚¯‚éŒõŠw‘JˆÚs—ñ—v‘f‚̂Ђ¸‚݈ˑ¶«FƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚̉e‹¿
1998”NH‹G“ú–{•¨—Šw‰ï@(27aYN-19)@1998.9.27

48 Šì–õ—FA‹n’zO—²AŽO‹´–LA‹v‹`_
”÷ŒXŽÎ(110)GaAs‚ÌMOCVD¬’·E‹C‘ŠƒGƒbƒ`ƒ“ƒO•\–Ê‚Ì€ŽüŠú“Iƒtƒ@ƒZƒbƒeƒBƒ“ƒO‚ÌAFMŠÏŽ@
1998”NH‹G‰ž—p•¨—Šw‰ï@(17p-P12-10)@1998.9.17

47 ‹n’zO—²A‘“¡‹I¶A²“¡˜a•FAŠì–õ—F
MBE¬’·AlGaAs/InGaAs/AlGaAs DH-pHEMT\‘¢ƒwƒeƒŠE–Ê‚ÌAFM•]‰¿
1998”Nt‹G‰ž—p•¨—Šw‰ï@(31a-R-5)@1998.3.31

46 ‹{‰º@Ž¡A–Ø‘º’B–çAŽO‹´–LA”óŒû‰p¢AŠì–õ—F
InGaAs/GaAsP ‰ž—͕➌^MQW\‘¢‚É‚æ‚é—ÕŠE–ŒŒú‚Ì‘‘å
1997”NH‹G‰ž—p•¨—Šw‰ï@(3p-T-2)@1997.10.3

45 Šì–õ—F
Schwoebelƒ‚ƒfƒ‹‚É‚¨‚¯‚錴ŽqŽæ‚èž‚Ý—¦‚Ì㉺ƒXƒeƒbƒv‚Å‚Ì”ñ‘ÎÌ«
1997”NH‹G‰ž—p•¨—Šw‰ï@(2p-M-17)@1997.10.2

44 ŽR‘º^ˆêAìè˜adA‰iˆä–LA“‡Œ°—mA‹{‰º@Ž¡AŠì–õ—FA\‰Í•q—Y
0.98ƒÊm‘уŠƒbƒWŒ^‘‹\‘¢”¼“±‘̃Œ[ƒU(2)
1997”Nt‹G‰ž—p•¨—Šw‰ï@(29p-PA-20)@1997.3.29

43 ìè˜adA‰iˆä–LA“‡Œ°—mAŽR‘º^ˆêA‹{‰º@Ž¡AŠì–õ—FA’·à_O‹B
0.98ƒÊm‘уŠƒbƒWŒ^‘‹\‘¢”¼“±‘̃Œ[ƒU(1)
1997”Nt‹G‰ž—p•¨—Šw‰ï@(29p-PA-19)@1997.3.29