0000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000

127 ¼Š_“à—ȁCˆäã«‘åCŠ–ì[‹KCŠì–õ—F
Ge(111)”÷ŒXŽÎŠî”ã‚Ö‚ÌGaSb‚ÌMBE¬’·‚É‚¨‚¯‚éBiƒT[ƒtƒ@ƒNƒ^ƒ“ƒg‚ÌŒø‰Ê
‘æ1‰ñŒ‹»HŠwúIISYSE ‡“¯Œ¤‹†‰ï (2P03) 2018.11.29

126 Šì–õ—F
nŒ`GaAs‚É‚¨‚¯‚é•sƒ•¨“`“±‚̃nƒo[ƒhƒoƒ“ƒhƒ‚ƒfƒ‹‚É‚æ‚é‰ðÍ
2018”Nt‹G‰ž—p•¨—Šw‰ï@(19p-F202-3) 2018.3.19

125 M. Nishigaichi, S. Tenma, K. Kato, S. Katsube, Y. Kajikawa
"Suppression of twin generation in the growth of InGaAs on Ge (111)"
The 29th International Conference on Defects in Semiconductors (ICDS2017), August 3, 2017, Matsue, Japan, ThP-24.

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”ã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘卑CX—º‰îCŠì–õ—F
Ge(111)Šî”ã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚̂̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”ã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘卑CX—º‰îCŠì–õ—F
Ge(111)Šî”ã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

124 Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie
"Suppression of Twin Generation in the Growth of GaAs on Ge (111) Substrates"
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), September 5, 2016, Montpellier, France, Mo-P-17.

123 Y. Kajikawa
"Hall factor for hopping conduction in n- and p-type GaN"
The 43rd International symposium on Compound Semiconductors (iscs2016), June 27, 2016, Toyama, Japan, MoP-ISCS-099.

122 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIVj\‘½dƒoƒ“ƒh‚̃lƒ‹ƒ“ƒXƒgŒW”‚Ì•\Ž®‚ÆCo1-xNixSb3‚ւ̉ž—p\
2016”Nt‹G‰ž—p•¨—Šw‰ï@(21p-W323-6) 2016.3.21

121 Šì–õ—F
Mnƒh[ƒvGaAs’†‚̂̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-14) 2016.3.20

120 Šì–õ—F
pŒ^InP‚¨‚æ‚ÑGaN’†‚̍ŋߐڃzƒbƒsƒ“ƒO“`“±‚ɑ΂·‚éƒz[ƒ‹ˆöŽq
2016”Nt‹G‰ž—p•¨—Šw‰ï@(20p-P13-13) 2016.3.20

119 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIIj\“`“±‘Ñ‘æ‚RƒoƒŒ[‚Ɖ¿“dŽq‘Ñ‚ÌŠñ—^\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-6) 2015.9.14

118 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»iIIj\ƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚ÆŒõŠwƒtƒHƒmƒ“ŽU—‚̉e‹¿\
2015”NH‹G‰ž—p•¨—Šw‰ï@(14p-PA6-5) 2015.9.14

117 Šì–õ—FC‘·ˆê”ŽC‘£‹v‹MCŒã‰Í“àŒ’‘¾C“ü]«‘å
Ge(111)Šî”ã‚Ö‚ÌGaAs‚ÌMBE¬’·‚É‚¨‚¯‚éGaSbŠÉÕ‘w‚ÌŒø‰Ê
2015”NH‹G‰ž—p•¨—Šw‰ï@(14a-2W-8) 2015.9.14

116 Šì–õ—F
“dŽ¥”g‚Æ“dŽq”g‚Ì”g“®•û’öŽ®‚̑Δä
2015”N“x‰ž—p•¨—E•¨—ŒnŠw‰ï’†‘Žl‘Žx•”‡“¯Šwpu‰‰‰ï@(Ea-1) 2015.8.1

115 ‘·ˆê”ŽC‘£‹v‹MCŽsê‘卑CX—º‰îCŠì–õ—F
Ge(111)Šî”ã‚ÌGaSbxAs1-x‚ÌMBE¬’·
2015”Nt‹G‰ž—p•¨—Šw‰ï@(13a-P15-4) 2015.3.13

114 Šì–õ—F
CoSb3‚̉¿“dŽq‘Ñ‚Ì”ñ•ú•¨ü«‚É‹Nˆö‚·‚éHallˆöŽq‚Ì‹­‚¢‰·“xˆË‘¶«
2015”Nt‹G‰ž—p•¨—Šw‰ï@(12a-A22-12) 2015.3.12

113 T. Hayase, Y. Kajikawa, and W. Yeh
"Analysis of temperature dependence of electrical properties of sputter-epitaxy grown Ge on Si"
11th Thin Film Materials & Devices Meeting, October 31, 2014, Kyoto, Japan. http://www.tfmd.jp/


112 Šì–õ—F
’ቷ‚Å‚ÌpŒ^CoSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ
2014”NH‹G‰ž—p•¨—Šw‰ï@(18p-A7-2) 2014.9.18

111 Šì–õ—F
Co1-xNixSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚̉ðÍ‚̐¸–§‰»
2014”NH‹G‰ž—p•¨—Šw‰ï@(18p-A7-1) 2014.9.18

110 Šì–õ—F
pŒ^CoSb3‚Ì—A‘—‚¨‚æ‚Ñ”M“d“Á«‚ÉŠÖ‚·‚éŽÀŒ±ƒf[ƒ^‚ÌŒ©’¼‚µ
2014”Nt‹G‰ž—p•¨—Šw‰ï@(19a-F11-1) 2014.3.19

109 Šì–õ—F
ƒCƒIƒ“‰»•sƒ•¨ŽU—‚ªŽx”z“I‚È”¼“±‘Ì‘½Œ‹»‚Ì“±“d—¦‚ɑ΂·‚éƒ|ƒeƒ“ƒVƒƒƒ‹á•Ç‚‚³‚Ì‚ä‚炬‚̉e‹¿
2013”Nt‹G‰ž—p•¨—Šw‰ï@(28p-F2-2) 2013.3.28


108 Šì–õ—F
”M‹N“d—͏o—͈öŽq‚ɑ΂·‚éƒ|ƒeƒ“ƒVƒƒƒ‹á•Ç‚‚³‚Ì‚ä‚炬‚̉e‹¿
2013”Nt‹G‰ž—p•¨—Šw‰ï@(27p-B9-1) 2013.3.27

107 Y. Kajikawa, T. Okuzako, and Y. Matsui 
Effects of the GaSbAs buffer layer on the properties of the polycrystalline InAs layer on glass
The 17th international symposium on molecular beam epitaxy(MBE2012) 2012.9.24
MoP-8

106 Šì–õ—F
k‘Þ‚µ‚½Si‘½Œ‹»”––Œ‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ
2012”NH‹G‰ž—p•¨—Šw‰ï@(13p-PB12-6) 2012.9.13

105 Šì–õ—F
k‘Þ‚µ‚½II-VI‘°‘½Œ‹»”––Œ‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ
2012”NH‹G‰ž—p•¨—Šw‰ï@(13a-H8-11) 2012.9.13

104 Šì–õ—FC‰ª‘ºŒ’‘¾C’–Žq—S‹M
k‘Þ”¼“±‘Ì‘½Œ‹»‚Ì“±“d—¦‚̉·“xˆË‘¶«‚̉ðÍ-‚h‚Ž‚o‚`‚“‘½Œ‹»‚Ö‚Ì“K—p-
2012”Nt‹G‰ž—p•¨—Šw‰ï@(17p-DP3-3) 2012.3.17

103 Šì–õ—F
GaN‚̉¿“dŽq‘тɑ΂·‚é”ñ‹É«–Ê“à‚̘c‚Ý‚ÌŒø‰Ê
2012”Nt‹G‰žEp•¨—Šw‰ï@(16p-DP1-11) 2012.3.16


102 ‰ª‘ºŒ’‘¾C…–ؐ°–çCŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚Ö•ªŽqüö’…‚µ‚½‚h‚Ž‚o‚`‚“‚Ì“d‹C“I“Á«
2011”NH‹G‰ž—p•¨—Šw‰ï@(30‚-‚yA-10) 2011.8.30

101 ‰œ”—‘ñ–çC¼ˆä—Ç‹LCŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚Ì‚h‚Ž‚`‚“‘½Œ‹»‘w‚Ì“Á«‚ɑ΂·‚éGaSbAsƒoƒbƒtƒ@‘w‚ÌŒø‰Ê
2011”NH‹G‰ž—p•¨—Šw‰ï@(30‚-‚yA-9) 2011.8.30

100 Y. Kajikawa and K.Okamura 
Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition
The 38th international symposium on Compound Semiconductors (iscs2011) 2011.5.24

99 Y. Kajikawa, Y. Iseki, and Y. Matsui
X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault density
The 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011) 2011.5.24.

98 ‰ª‘ºŒ’‘¾CŠì–õ—F
GaSb‹y‚ÑGaAsSb‘½Œ‹»”––Œ‚É‚¨‚¯‚é•sƒ•¨“`“±
2011”Nt‹G‰ž—p•¨—Šw‰ï@(25p-BA-8) 2011.3.25

97 ˆäŠÖNGC¼ˆä—Ç‹LCŠì–õ—F
•ªŽqüö’…‚µ‚½InP‹y‚ÑInAs‘½Œ‹»”––Œ‚̐ϑwŒ‡Š×–§“x‚̐„’è
2011”Nt‹G‰ž—p•¨—Šw‰ï@(25p-BA-9) 2011.3.25


96 Šì–õ—F
“`“±‘Ñ‚Ì”ñ•ú•¨ü«‚ÆFermi-Dirac•ª•z‚ðl—¶‚µ‚½—±ŠEŽU—ˆÚ“®“x‚̉ðÍ
2010”NH‹G‰ž—p•¨—Šw‰ï@(16a-NH-7) 2010.9.16

95 ‰ª‘ºŒ’‘¾C‰œ”—‘ñ–çC¼ˆä—Ç‹ICŠì–õ—F
•ªŽqüö’…‚µ‚½GaAsSb‘½Œ‹»”––Œ‚Ì“d‹C“I“Á«‚̉·“xˆË‘¶«
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2010”N“xŽx•”Šwpu‰‰‰ï(Da1-2) 2010.7.31

94 T. Okuzako, K.Okamura, Y. Matsui, K. Nakaya, and Y. Kajikawa
Molecular-Beam Deposition of Polycrystalline GaSbAs Thin Films on G‚Œass and Plastic Substrates
The 37th International symposium on Compound Semiconductors (iscs2010) 2010.5.31-6.4

93 Šì–õ—F
˜Z•û»”¼“±‘Ì—ÊŽqˆäŒË‚É‚¨‚¯‚鐳E‚Ì—ÊŽq•Â‚¶ž‚ߎ¿—Ê
2010”Nt‹G‰ž—p•¨—Šw‰ï@(18a-TM-21) 2010.3.18

92 ‰œ”—‘ñ–çC‰ª‘ºŒ’‘¾C¼ˆä—Ç‹LC’†’JŒö—ºCŠì–õ—F
ƒKƒ‰ƒXŠî”‚¨‚æ‚уvƒ‰ƒXƒ`ƒbƒNŠî”ã‚Ö‚ÌGaSbAs‘½Œ‹»”––Œ‚ÌMBE¬’·
2010”Nt‹G‰ž—p•¨—Šw‰ï@(18a-TW-5) 2010.3.18

91 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çCŠì–õ—F
GaInAs‘½Œ‹»”––Œ‚Ì“d‹C“IŒõŠw“I“Á«
“dŽqî•ñ’ʐMŠw‰ï@“dŽqƒfƒoƒCƒXŒ¤‹†‰ï (ED2009-139) 2009.11.19

90 ‰œ”—‘ñ–çC’¹‹‹`eCŠì–õ—F
InGaAs‘½Œ‹»”––Œ‚É‚¨‚¯‚é“d‹C“`“±‹@\
”––ŒÞ—¿ƒfƒoƒCƒXŒ¤‹†‰ï‘æ6‰ñŒ¤‹†W‰ï@(2P-55) 2009.11.2

89 Šì–õ—F
Si(11
l)–Ê‹É”–SOIpMOSFET\‘¢‚É‚¨‚¯‚鐳E‚Ì—ÊŽq•Â‚¶ž‚ߎ¿—Ê
2009”NH‹G‰ž—p•¨—Šw‰ï@(8p-TB-8) 2009.9.8

88 ‰œ”—‘ñ–çCŠì–õ—FC‘³®C‚Œ©T–ç
InGaAs‘½Œ‹»”––Œ‚É‚¨‚¯‚é“d‹C“`“±‹@\
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2009”N“xŽx•”Šwpu‰‰‰ï(Ea-3) 2009.8.1

87 Šì–õ—F
III-V‘°‰»‡•¨”¼“±‘̂̃tƒŒƒLƒVƒuƒ‹ƒfƒoƒCƒX‰ž—p‚̉”\«
‰ž—p•¨—Šw‰ï‰ž—p“dŽq•¨«•ª‰È‰ïŒ¤‹†—á‰ï@2009.5.22

86 Šì–õ—F
Si(110)—ÊŽqˆäŒË‚É‚¨‚¯‚鐳E—LŒøŽ¿—Ê
2009”Nt‹G‰ž—p•¨—Šw‰ï@(1a-P13-4) 2009.4.1

85 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çC‘³®CŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚ÖMBE¬’·‚µ‚½GaInAs‚ÌŒõŠw“I“Á«
2009”Nt‹G‰ž—p•¨—Šw‰ï@(31p-TF-6) 2009.3.31


84 ’¹‹‹`eC‰œ”—‘ñ–çC‚Œ©T–çC‘³®C‘吼˜a‹`C‰œE—‘ñ–çCŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚ÉMBE¬’·‚µ‚½GaInAs‚ÌŒõŠw“I“Á«
“‡ª‘åŠw‘‡—HŠw•”‹I—vDƒVƒŠ[ƒYA vol.42 2009.2.17 http://ap09.lib.shimane-u.ac.jp/article.php?flag=j&output=csv&arid=6996


83 Šì–õ—FC‘³®C‚Œ©T–çC’¹‹‹`eC‰œ”—‘ñ–çC‘åè–«
ƒKƒ‰ƒXŠî”ã‚ÖMBE¬’·‚µ‚½InGaAs‘½Œ‹»‚Ì“d‹C“I“Á«(II)@|‰·“x•Ï‰»|
2008”NH‹G‰ž—p•¨—Šw‰ï@(4a-ZD-7) 2008.9.4

82 ’¹‹‹`eA‘³®A‚Œ©T–çA‘吼˜a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚ÖMBE¬’·‚µ‚½GaInAs‘½Œ‹»‚ÌŒõŠw“I“Á«
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2008”N“xŽx•”Šwpu‰‰‰ï(Fa-03) 2008.8.2

81 ‚Œ©T–çA‘³®A’¹‹‹`eAŠì–õ—F
ƒKƒ‰ƒXŠî”ã‚ÖMBE¬’·‚µ‚½InGaAs‘½Œ‹»‚Ì“d‹C“I“Á«
2008”Nt‹G‰ž—p•¨—Šw‰ï@(29a-ZT-7) 2008.3.29

80 ‘³®A‹v‰Æ˜ÐA‘吼˜a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”‹y‚уvƒ‰ƒXƒ`ƒbƒNŠî”ã‚Ö‚Ì•ªŽqüö’…–@‚É‚æ‚éInAs‚̒ቷ¬’·
”––ŒÞ—¿ƒfƒoƒCƒXŒ¤‹†‰ï‘æ‚S‰ñŒ¤‹†W‰ï@(P-39) 2007.11.2

79 M. Takushima, and Y. Kajikawa
Excess As in low-temperature Grown InAs
The 34th international symposium on Compound Semiconductors (iscs2007) 2007.10.15-10.18.

78 K. Ohnishi, M. Shiba, M. Yamakage, and Y. Kajikawa
Refractive Index of TlGaAs
The 34th international symposium on Compound Semiconductors (iscs2007) 2007.10.15-10.18.

77 M. Takushima, Y. Kajikawa, Y. Kuya, M. Shiba, and K. Ohnishi
Low-temperature growth of InAs on glass and plastic film substrates by molecular-beam deposition
The 19th International Conference on Indium Phosphide and Related Materials (IPRM'07) 2007.5.15-5.16.

76 ‘³®A‹v‰Æ˜ÐA‘吼˜a‹`AŠì–õ—F
ƒKƒ‰ƒXŠî”‹y‚уvƒ‰ƒXƒ`ƒbƒNŠî”ã‚Ö‚ÌInAs‚̒ቷ¬’·
2007”Nt‹G‰ž—p•¨—Šw‰ï@(30a-Q-7) 2007.3.30

75 ‘吼˜a‹`AŽz”g«ŠóAŽRˆü–³ìAŠì–õ—F
TlGaAs”––Œ‚Ì”½ŽËƒXƒyƒNƒgƒ‹‘ª’è
2007”Nt‹G‰ž—p•¨—Šw‰ï@(29p-Q-4) 2007.3.29

74 M. Shiba, R. Ikariyama, M. Takushima, and Y. Kajikawa
Properties of low-temperature grown InAs and their changes upon annealing
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.6

73 M. Takushima, N. Kobayashi, Y. Yamashita, Y. Kajikawa, Y. Satou, Y. Tanaka, and N. Sumida
Thallium incorporation during TlInAs growth by low-temperature MBE
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.7

72 K. Ohnishi, T. Kanda, H. Kiriyama, Y. Kajikawa, S. Tamoto, and T. Narusawa
Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE
The 14th International Conference on Molecular Beam Epitaxy<MBE2006>,2006.9.4

71 “c–{WŒáAªˆø‘ñ–çAŠì–õ—FA¬‘ò’‰
RBS/Channeling–@‚É‚æ‚é’ቷ¬’·TlGaAs‚ÌŒ‹»«•]‰¿
2006”NH‹G‰ž—p•¨—Šw‰ï@(29a-B-7) 2006.8.29

71 “c–{WŒáAªˆø‘ñ–çAŠì–õ—FA¬‘ò’‰
RBS/Channeling–@‚É‚æ‚é’ቷ¬’·TlGaAs‚ÌŒ‹»«•]‰¿
•½¬18”N“x@‘æ15‰ñ“ú–{Þ—¿Šw‰ïu‰‰‘å‰ï 2006.6.24

70 ’ôŽR—‹†A‘³®AŠì–õ—F
’ቷ¬’·InAs‚Ì“d‹C“I“Á«‚Æ‚»‚̃Aƒj[ƒ‹‚É‚æ‚é•Ï‰»
2006”Nt‹G‰ž—p•¨—Šw‰ï@(25a-T-6) 2006.3.25

69 Šì–õ—FA‘³®A’ôŽR—‹†AŽz”g«Šó
’ቷ¬’·InAs‚ւ̃Aƒj[ƒ‹‚̉e‹¿
2005”NH‹G‰ž—p•¨—Šw‰ï@(11a-ZQ-3) 2005.9.11

68 Žz”g«ŠóA‘³®A’ôŽR—‹†AŠì–õ—F
’ቷ¬’·InAs‚ւ̃Aƒj[ƒ‹‚̉e‹¿
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘EŽl‘Žx•”C2005”N“xŽx•”Šwpu‰‰‰ï 2005.7.30

67 Šì–õ—FA¼–{®ŒÈA“¡‰ª‘å•ãAŽs“cŒj–ç
’ቷMBE¬’·InGaAs/GaAs—ÊŽqˆäŒË‚̃tƒHƒgƒ‹ƒ~ƒlƒbƒZƒ“ƒX‚ɑ΂·‚é‹}‘¬‰Á”Mˆ—‚ÌŒø‰Ê
2005”Nt‹G‰ž—p•¨—Šw‰ï@(1a-ZM-3) 2005.4.1

66 Šì–õ—F
’ቷGaAsCInAs‚É‚¨‚¯‚éTl‚̌ŗnŒÀŠE
2004”Nt‹G‰ž—p•¨—Šw‰ï@(29p-ZX-5) 2004.3.29

65 ¼–{®ŒÈAŠì–õ—F
(110)—ÊŽqˆäŒË‚É‚¨‚¯‚鐳E—LŒøŽ¿—ʂ̘c‚Ý‚É‚æ‚é•Ï‰»
‰ž—p•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘Žx•”EŽl‘Žx•”C2003”N“xŽx•”—á‰ï 2003.8.2

64 ¬—ѐM—TA¼–{®ŒÈAŠì–õ—F
TlGaAs/GaAs‘½d—ÊŽqˆäŒË\‘¢‚̒ቷMBE¬’·
‰žEp•¨—Šw‰ï’†‘Žl‘Žx•”C“ú–{•¨—Šw‰ï’†‘Žx•”EŽl‘Žx•”C2003”N“xŽx•”—á‰ï 2003.8.2

63 ”óŒû‹±–¾A¼–{®ŒÈAŠì–õ—F
(110)˜c‚Ý—ÊŽqˆäŒË‚É‚¨‚¯‚鐳E—LŒøŽ¿—Ê
2003”Nt‹G‰ž—p•¨—Šw‰ï@(30p-ZE-6) 2003.3.30

62 ìè’¼sA¬—ѐM—TA”óŒû‹±–¾A¼–{®ŒÈAŠì–õ—F
TlGaAs/GaAs‘½d—ÊŽqˆäŒË\‘¢‚̒ቷMBE¬’·
2003”Nt‹G‰ž—p•¨—Šw‰ï@(29p-YA-16) 2003.3.29

61 ¼–{®ŒÈA¬—ѐM—TAŠì–õ—F
’ቷMBE¬’·‚É‚¨‚¯‚éTlGaAs‚̃Gƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú (2) -¬’·‰·“x‚ÆAsˆ³‚̉e‹¿-
“d‹CEî•ñ’ʐMŠw‰ï’†‘Žx•”‘æ53‰ñ˜A‡‘å‰ï 2002.10.19

60 ¬—ѐM—TA¼–{®ŒÈAŠì–õ—F
’ቷMBE¬’·‚É‚¨‚¯‚éTlGaAs‚̃Gƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú (1)@-Tl‘g¬ˆË‘¶«-
“d‹CEî•ñ’ʐMŠw‰ï’†‘Žx•”‘æ53‰ñ˜A‡‘å‰ï 2002.10.19

59 ¬—ѐM—TAŠì–õ—FA¼–{®ŒÈ
’ቷMBE¬’·TlGaAs‚É‚¨‚¯‚éƒGƒsƒ^ƒLƒVƒƒƒ‹ŒÀŠE–ŒŒú‚Ì‘g¬ˆË‘¶«
“dŽqî•ñ’ʐMŠw‰ï@“dŽq•”•iEÞ—¿Œ¤‹†‰ï 2002.10.11

58 Šì–õ—FA¬—ѐM—TA¼–{®ŒÈ
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éŠî”‰·“x‚ÆAsˆ³‚̉e‹¿
2002”NH‹G‰ž—p•¨—Šw‰ï@(26p-YD-2) 2002.9.26

57 Šì–õ—FA‹T’J‰ëLA¬—ѐM—TA¼–{®ŒÈA—„—Ǐ²
GaAsŠî”ã‚ÌTlGaAs’ቷMBE¬’·‚É‚¨‚¯‚é’PŒ‹»¬’·‚ÌŒÀŠE–ŒŒú
2002”Nt‹G‰ž—p•¨—Šw‰ï@(30a-ZQ-4)@2002.3.30

56 Šì–õ—FA‹v•Û“c_bC’©”ä“ޏGˆê
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éTl•ªŽqü—ʂ̉e‹¿
2001”NH‹G‰ž—p•¨—Šw‰ï@(13p-T-11)@2001.9.13

55 Kajikawa Y, Kubota H, Asahina S, and Kanayama N
Growth of TlGaAs by low-temperature molecular-beam epitaxy
The 13th International Conference on Crystal Growth, Kyoto, Japan, 04a-SB3-05, 2001.8.4

54 Kajikawa Y
Effects of the Barrier Height on Optical Anisotropy of (110)-Oriented Strained Quantum Wells
13th International Conference on Indium Phosphide and Related Materials, Nara, Japan, WP-05, 2001.5.16

53 Šì–õ—FA‹v•Û“c_bC’©”ä“ޏGˆê
TlGaAs‚̒ቷMBE¬’·‚É‚¨‚¯‚éAsˆ³‚̉e‹¿
2001”Nt‹G‰ž—p•¨—Šw‰ï@(29a-G-6)@2001.3.29

52 Šì–õ—FA‹v•Û“c_bC’©”ä“ޏGˆê
GaAsŠî”ã‚Ö‚ÌTlGaAs‚ÌMBE¬’·
2000”NH‹G‰ž—p•¨—Šw‰ï@(4p-ZA-13)@2000.10.4

51 Šì–õ—FA’©”ä“ޏGˆê
InAsŠî”ã‚ÉMBE¬’·‚µ‚½InTlAs‚ÌXü‰ñÜ‘ª’è
2000”Nt‹G‰ž—p•¨—Šw‰ï@(28a-P3-3)@2000.3.28

50 H. Kizuki, Y. Kouji, N. Hayafuji, and Y. Kajikawa
Quasi-persistent photoconductivity of double heterojunction pseudomorphic high electron mobility transistor epitaxial wafers
7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, Th4-19, 1999.7.27

49 Šì–õ—F
‚Ђ¸‚Ý—ÊŽqˆäŒË‚É‚¨‚¯‚éŒõŠw‘JˆÚs—ñ—v‘f‚̂Ђ¸‚݈ˑ¶«FƒXƒsƒ“‹O“¹•ª—ôƒoƒ“ƒh‚̉e‹¿
1998”NH‹G“ú–{•¨—Šw‰ï@(27aYN-19)@1998.9.27

48 Šì–õ—FA‹n’zO—²AŽO‹´–LA‹v‹`_
”÷ŒXŽÎ(110)GaAs‚ÌMOCVD¬’·E‹C‘ŠƒGƒbƒ`ƒ“ƒO•\–ʂ̏€ŽüŠú“Iƒtƒ@ƒZƒbƒeƒBƒ“ƒO‚ÌAFMŠÏŽ@
1998”NH‹G‰ž—p•¨—Šw‰ï@(17p-P12-10)@1998.9.17

47 ‹n’zO—²A‘“¡‹I¶A²“¡˜a•FAŠì–õ—F
MBE¬’·AlGaAs/InGaAs/AlGaAs DH-pHEMT\‘¢ƒwƒeƒŠE–Ê‚ÌAFM•]‰¿
1998”Nt‹G‰ž—p•¨—Šw‰ï@(31a-R-5)@1998.3.31

46 ‹{‰º@Ž¡A–Ø‘º’B–çAŽO‹´–LA”óŒû‰p¢AŠì–õ—F
InGaAs/GaAsP ‰ž—͕⏞Œ^MQW\‘¢‚É‚æ‚é—ÕŠE–ŒŒú‚Ì‘‘å
1997”NH‹G‰ž—p•¨—Šw‰ï@(3p-T-2)@1997.10.3

45 Šì–õ—F
Schwoebelƒ‚ƒfƒ‹‚É‚¨‚¯‚錴ŽqŽæ‚荞‚Ý—¦‚̏㉺ƒXƒeƒbƒv‚Å‚Ì”ñ‘Ώ̐«
1997”NH‹G‰ž—p•¨—Šw‰ï@(2p-M-17)@1997.10.2

44 ŽR‘º^ˆêAìè˜adA‰iˆä–LA“‡Œ°—mA‹{‰º@Ž¡AŠì–õ—FA\‰Í•q—Y
0.98ƒÊm‘уŠƒbƒWŒ^‘‹\‘¢”¼“±‘̃Œ[ƒU(2)
1997”Nt‹G‰ž—p•¨—Šw‰ï@(29p-PA-20)@1997.3.29

43 ìè˜adA‰iˆä–LA“‡Œ°—mAŽR‘º^ˆêA‹{‰º@Ž¡AŠì–õ—FA’·à_O‹B
0.98ƒÊm‘уŠƒbƒWŒ^‘‹\‘¢”¼“±‘̃Œ[ƒU(1)
1997”Nt‹G‰ž—p•¨—Šw‰ï@(29p-PA-19)@1997.3.29