1. Suzuki H, Kajikawa Y, Toshima N, Ryufuku
H, and Watanabe T , "Electron-capture
cross sections from He in collision with
bare nuclear ions", Phys. Rev. A 29
(1984) pp.525-530.
2. Kajikawa Y, Mizuguchi K, Murotani T, and
Fujikawa K, "The effects of infrared
flash lamp annealing on the electrical properties
of modulation doped GaAs/N-AlGaAs structures",
J. Vac. Sci. Technol. B2 (1984) pp.249-251.
3. Ochi S, Hayafuji N, Kajikawa Y, Mizuguchi
K, and Murotani T, "Growth of GaAs/AlGaAs
quantum well structures using a large-scale
MOCVD reactor", J. Cryst. Growth 77
(1986) pp. 553-556.
4. Kajikawa Y, Ochi S, Hayafuji N, Mizuguchi K, Hirano R, and Murotani
T, "Effect of substrate orientation on the photoluminescence of GaAs
on Si", 18th Int. Conf. SSDM Extended Abstracts (1986) pp.125-128.
5. Kajikawa Y, Sugiyama N, Kamijoh T, and
Katayama Y, "Enhancement of quantum-confined
Stark effect in GaAs-AlGaAs quantum wells
by quantization along the [111] axis",
Jpn. J. Appl. Phys. 28 (1989) pp.L1022-L1024.
6. Sugiyama N, Isu T, Kamijoh T, Kajikawa
Y, and Katayama Y, "A new method for
atomic- layer-controled molecular beam epitaxy
of GaAs exploiting the desorption of the
excess Ga atoms", Jpn. J. Appl. Phys.
28 (1989) L1446-L1148.
7. Sugiyama N, Isu T, Kamijoh T, Kajikawa
Y, and Katayama Y, "Atomic layer growth
of GaAs by molecular beam epitaxy using desorption
of excess Ga atoms", Vacuum 41 (1989)
915-917.
8. Kajikawa Y, Hata M, Sugiyama N, and Katayama Y, "Photocurrent spectroscopy
of a (001)- and a (111)-oriented GaAs/Al0.33Ga0.67As quantum well structure",
Phys. Rev. B42 (1990) pp.9540-9545.
9. Kajikawa Y, "Donor-related deep levels in heavily Se-doped Alx
Ga1-x As", J. Appl. Phys. 69 (1991) pp.1429-1434.
10. Kajikawa Y, "Electric field effects
on optical transitions in InGaAs/GaAs superlattices:
Evidence of type-II superlattices for light
holes", Superlatt. Microstruct. 9 (1991)
pp.391-395.
11. Kajikawa Y, Hata M, and Isu T, "Optical
matrix elements in (110)-oriented quantum
wells", Jpn. J. Appl. Phys. 30 (1991)
pp.1944-1945.
12. Hata M, Isu T, Watanabe A, Kajikawa Y,
and Katayama Y, "Surface diffusion and
sticking coefficient of adatoms to atomic
steps during molecular beam epitaxy growth",
J. Cryst. Growth 114 (1991) pp.203-208.
13. Kajikawa Y, M.Hata, T.Isu, and Y.Katayama,
"The condition for step flow in MBE
growth on vicinal surfaces", Surf. Sci.
265 (1992) pp.241-251.
14. Kajikawa Y, Hata M, Isu T, and Katayama
Y, "Linear polarization effects in (110)
quantum wells for light propagating perpendicular
to the well planes", Surf. Sci. 267
(1992) pp.501-504.
15. Kajikawa Y, Nakanishi M, and Nagahama
K, "Effects of the MBE growth temperature
on Si-doped Alx Ga1-x As (x=0, 0.26) and
HEMT", Semicond. Sci. Technol. 7 (1992)
pp.1170-1177.
16. Sugiyama N and Kajikawa Y, "Mechanism
of arsenic incorporation growth of gallium
arsenide on gallium-covered surfaces",
J. Cryst. Growth 123 (1992) pp.393-396.
17. Kajikawa Y and Hata M, "Extreme
optical anisotropy in strained (110) quantum
wells", Superlatt. Microstruct. 12 (1992)
pp.355-358.
18. Kajikawa Y, "Anomaly in the in-plane
polarization properties of (110)-oriented
quantum wells under [110] uniaxial stress",
Phys. Rev. B47 (1993) pp.3649-3660.
19. Kajikawa Y, "Extreme optical anisotropy in (110) quantum wells
induced by [110] uniaxial stress", Jpn. J. Appl. Phys. Suppl.32-1
(1993) pp.166-168.
20. Kajikawa Y, "Comparison of 1s-2s exciton energy splittings between
(001) and (111) GaAs/ AlxGa1-xAs quantum wells", Phys. Rev. B48 (1993)
pp.7935-7939.
21. Kajikawa Y, "Level anticrossing
and related giant optical anisotropy caused
by the Stark effect in a strained (110) quantum
well", Phys. Rev. B49 (1994) pp.8136-8146.
22. Yodo T, Tamura M, Lopez M, and Kajikawa
Y, "GaAs heteroepitaxial growth on vicinal
Si (110) substrates by molecular beam epitaxy",
J. Appl. Phys. 76 (1994) pp.7630-7632.
23. Kajikawa Y, Brandt O, Kanamoto K, and
Tsukada N, "Optical anisotropy of (11N)
and vicinal (001) quantum wells", J.
Cryst. Growth 150 (1995) pp.431-435.
24. Kajikawa Y, "Well-width dependence
of the optical anisotropies in (001) and
(110) semiconductor quantum wells: The effect
of spin-orbit split-off bands", Phys.
Rev. B51 (1995) pp.16790-16799.
25. Miyashita M, Karakida S, Shima A, Kajikawa
Y, Mihashi Y, and Takamiya S, "Suppression
of degradation in the crystalline quality
of InGaAs/(Al)GaAs strained quantum-well
structures by increasing the barrier thickness",
Inst. Phys. Conf. Ser. No.145 (1996) pp.355-360.