研究業績(2015年)

[1] 学術論文
(1) Toshiaki Tsuchiya and Yukinori Ono,"Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping methos," Jpn. J. Appl. Phys., vol. 54, no. 4S, pp. 04DC01_1-7, 2015.

(2) M. Hori, T. Watanabe, T. Tsuchiya, and Y. Ono,"Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current," Appl. Phys. Lett., vol. 106, no. 4, 041603_1-4, 2015.

(3) T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, and Y. Ono,"Evaluation of Accuracy of Charge Pumping Current in Time Domain," IEICE Trans. Electron., vol. E98-C, no. 5, pp. 390-394, May 2015.

(4) T. Tsuchiya,"Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory," ECS Trans. vol. 69(10), pp. 145-154, 2015.

[2] 国際会議
(1) (Keynote speech)T. Tsuchiya,"Detection of Single Traps and Characterization of Individual Traps: Beginning of "Atomistic Reliability Physics"," IEEE ISNE2015 (The 4th Int'l Symp. on Next-Generation Electronics), Taipei, Taiwan, May 4-6, 2015.

(2) (Invited talk)T. Tsuchiya,"Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory," The 228th Electrochemical Society Meeting, the Symp. on ULSI Process Integration 9, Phoenix, Arizona, USA, Abstract #1088, Oct. 11-15, 2015.

(3) T. Tsuchiya, "Distribution of the energy levels of single interface traps in nanoscale MOSFETs and a comparison of the actual number of traps with the values determined by conventional charge pumping theory," 46th IEEE Semiconductor Interface Specialist Conference (SISC 2015), Arlington, VA, USA, 13.4, Dec. 2-5, 2015.

[3] 研究会・委員会等
(1)
(招待講演)土屋敏章,”MOS界面近傍の個々のトラップ評価:CP法による単一Pbセンターの直接観測・評価と多値RTN関与の個別トラップ評価,” 日本学術振興会半導体界面制御技術第154委員会第95回研究会,pp. 1-8,キャンパス・イノベーションセンター東京,2015年5月29日.

(2) (招待講演)T. Tsuchiya,"Detection and Characterization of Single MOS Interface Traps," IEEE EDS DL-Workshop -Carrier Trapping Origin of Device Degradation-, Hiroshima Univ., Hiroshima, Aug. 26, 2015.

[4] 学会講演会
(1) 土屋敏章,小野行徳,”単一Si/SiO2界面トラップのチャージポンピング(CP)特性:Pbセンターの電気的直接観測と従来CP理論の原理的改善,”第62回応用物理学会春季学術講演会,11p-A23-8,2015年3月11-14日(東海大学湘南キャンパス).

(2) 堀 匡寛,渡辺時暢,土屋敏章,小野行徳,”チャージポンピング電流の実時間計測による電子捕獲過程の解析,”第62回応用物理学会春季学術講演会,11p-A23-9,2015年3月11-14日(東海大学湘南キャンパス).


(3) 堀 匡寛,渡辺時暢,土屋敏章,小野行徳,”チャージポンピング電流の実時間計測による電子放出,再結合過程の直接観察,”第62回応用物理学会春季学術講演会,11p-A23-10,2015年3月11-14日(東海大学湘南キャンパス).