国際会議録(査読有り)

(1)M. Tsukada, N. Shima, S. Tsuneyuki, and H. Kageshima, "Theory of electron attachment of van der Waals microclusters", Proceedings of 'Microclusters', The First NEC Symposium (Hakone and Kawasaki, Japan), pp. 174-179 (1986).

(2)M. Tsukada, N. Shima, Z. Zhu, K. Kobayashi, H. Kageshima, and N. Isshiki, "Mechanism of reconstruction of Si(100) surfaces", 'Ordering at Surfaces and Interfaces', Proceedings of The Third NEC Symposium, Hakone, Japan, October 7-11, 1990, edited by A. Yoshimori, T. Shinjo, and H. Watanabe, Springer-Verlag (Berlin), pp. 145-152 (1992).

(3)M. Tsukada, K. Kobayashi, H. Kageshima, N. Isshiki, and S. Watanabe, "Computational physics approach to scanning tunneling microscopy and spectroscopy", 'Computational Approaches in Condensed-Matter Physics', Proceedings of The 6th Nishinomiya-Yukawa Memorial Symposium, Nishinomiya, Japan, October 24 and 25, 1991, edited by S. Miyashita, M. Imada, and H. Takayama, Springer-Verlag (Berlin), pp. 16-21 (1992).

(4)H. Kageshima and M. Tabe, "Effect of oxygen termination on electronic states of silicon quantum slabs", in 'Control of Semiconductor Interfaces', edited by Ohdomari, Oshima, and Hiraki, Elsevier, pp.227-232 (1994).

(5)H. Kageshima and K. Shiraishi, "Double bond formation mechanism for passivating Si/SiO2 interface states", Proceedings of 23rd International Conference on the Physics of Semiconductors (ICPS23, Berlin, Germany), '23rd International Conference on the Physics of Semiconductors', edited by Matthias Scheffler and Roland Zimmermann, World Scientific (Singapore), pp. 903-906 (1996).

(6)H. Kageshima and K. Shiraishi, "Formalism for calculating momentum matrix elements with ultra-soft Pseudopotentials", Proceedings of 23rd International Conference on the Physics of Semiconductors (ICPS23, Berlin, Germany), '23rd International Conference on the Physics of Semiconductors', edited by Matthias Scheffler and Roland Zimmermann, World Scientific (Singapore), pp. 305-308 (1996).

(7)H. Kageshima, K. Shiraishi, and K. Takeda, "Electronic structures of penta-heptagonal boron-carbon networks", Proceedings of 23rd International Conference on the Physics of Semiconductors (ICPS23, Berlin, Germany), '23rd International Conference on the Physics of Semiconductors', edited by Matthias Scheffler and Roland Zimmermann, World Scientific (Singapore), pp. 3371-3374 (1996).

(8)H. Kageshima and K. Shiraishi, "First principles study of photoluminescence from silicon/silicon-oxide interfaces", 'Materials and Devices for Silicon-Based Optoelectronics', edited by A. Polman, S. Coffa, and R. Soref, Symposium Proceedings, Materials Research Society (Pennsylvania), vol. 486, pp.337-342 (1998).

(9)H. Kageshima and K. Shiraishi, "First principles study of interfacial reaction atomic process at silicon oxidation", 'Microscopic Simulation of Interfacial Phenomena in Solids and Liquids', edited by S. R. Phillpot, P. D. Bristowe, D. G. Stroud, and J. R. Smith, Symposium Proceedings, Materials Research Society (Pennsylvania), vol. 492, pp.195-200 (1998).

(10)K. Shiraishi, M. Nagase, S. Horiguchi, and H. Kageshima, "Theoretical investigation of effective quantum dots induced by strain in semiconductor wires", in 'Microcrystalline and Nanocrystalline Semiconductors', Symposium Proceedings, Materials Research Society (Pennsylvania), vol. 536, pp. 533-538 (1999).

(11)K. Shiraishi, H. Kageshima, and M. Uematsu, "Microscopic mechanism of Si oxidation", The Proceedings of the 25th International Conference on the Physics of Semiconductors (ICPS25, Osaka, Japan), edited by N. Miura and T. Ando, pp. 309-312 (2000).

(12)H. Kageshima, A. Taguchi, and K. Wada, "Theoretical Investigation of Suppression of Vacancy Aggregation due to Nitrogen in Si", The Proceedings of the 25th International Conference on the Physics of Semiconductors (ICPS25, Osaka, Japan), edited by N. Miura and T. Ando, pp. 1469-1470 (2000).

(13)H. Kageshima, K. Shiraishi, and M. Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission", Proceedings of International Conference of Semiconductor Technology, Electrochemical Society (ECS-ISTC2001, Shanghai, China), edited by M. Yang, vol. 2001-17, pp. 174-184 (2001).

(14)H. Kageshima, A. Taguchi, and K. Wada, "Theoretical investigation of nitrogen doping effect on aggregation processes of Si interstitials", Proceedings of the 26th International Conference on the Physics of Semiconductor (ICPS26, Edinbarough, United Kingdom), edited by A. R. Long and J. H. Davies, Institute of Physics Conference Series Number 171 (Institute of Physics Publishing, Bristol and Philadelphia), H57 (5 pages) (2003).

(15)T. Akiyama and H. Kageshima, "First-principles study of reaction of atomic oxygen at SiO2/Si(100) interfaces", Proceedings of the 26th International Conference on the Physics of Semiconductor (ICPS26, Edinbarough, United Kingdom), edited by A. R. Long and J. H. Davies, Institute of Physics Conference Series Number 171 (Institute of Physics Publishing, Bristol and Philadelphia), H16 (6 pages) (2003).

(16)M. Uematsu, H. Kageshima, and K. Shiraishi, "Effect of stress on pattern dependent oxidation of silicon nanostructures", International Conference on Simulation of Semiconductor Processes and Devices (Munich, Germany), Simulation of Semiconductor Processes and Devices 2004, pp. 327-330 (2004).

(17)T. Akiyama and H. Kageshima, "Microscopic Theory of Oxygen Reaction Mechanisms at SiO2/Si(100) Interface", Proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS27, Flagstaff, USA), AIP Conference Proceedings, Vol. 772, pp. 393-394 (2005).

(18)H. Kageshima, M. Uematsu, Kazuto Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi, "First-principles study of excess Si-atom stability around Si-oxide/Si interfaces", Proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS27, Flagstaff, USA), AIP Conference Proceedings, Vol. 772, pp. 389-390 (2005).

(19)H. Kageshima, A. Taguchi, and K. Wada, "Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics", Proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS27, Flagstaff, USA), AIP Conference Proceedings, Vol. 772, pp. 77-78 (2005).

(20)H. Kageshima and M. Uematsu, "Strain dependence of stabilities of Si-related defects in Si-oxide", Proceedings of 28th International Conference of Physics of Semiconductors  (28th ICPS, Wien, Austria), Physics of Semiconductors, Pts. A and B, Vol. 893, pp. 193-194 (2006).

(21)H. Kageshima, A. Taguchi, and K. Wada, "Theoretical comparison of nitrogen-doping effects on silicon crystal growth with oxygen-doping effects", Proceedings of 28th International Conference of Physics of Semiconductors (28th ICPS, Wien, Austria), Physics of Semiconductors, Pts. A and B, Vol. 893, pp. 19-20 (2006).

(22)M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe", J. Phys. Conf. Ser. 100, pp. 052006-1-4 (2008).

(23)H. Kageshima, "Mechanisms of nanochannel formation processes: Thermal oxidation of Si nanostructures and graphene formation on SiC", Proceedings of 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai China, pp. 1218-1221  (2010).

(24)S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, "Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC", in 'Symposium B Carbon-Based Electronic Devices — Processing, Performance and Reliability', Symposium Proceedings, Materials Research Society (Pennsylvania), vol. 1283, mrsf10-1283-b09-02 (6pages) (2011). 

(25)H. Kageshima and A. Fujiwara, "Effective Dielectric Constant of Sinanofilm Channel in the Full Inversion Regime under Field Effect due to Symmetric Double Gate", AIP Conf. Proc. Vol. 1399, pp. 197-198 (2011).

(26)H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Atomic Structure of Epitaxial Graphene Islands on SiC(0001) Surfaces and their Magnetoelectric Effects", AIP Conf. Proc. Vol. 1399, pp. 755-756 (2011).

(27)H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Role of Step in Initial Stage of Graphene Growth on SiC(0001)", AIP Conference Proceedings, Vol. 1566, pp. 173-174 (2013). 

(28)M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto, "First principles approach to C aggregation process during 0th graphene growth on SiC(0001)", AIP Conference Proceedings, Vol. 1566, pp. 129-130 (2013).

(29)H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Theoretical studies of graphene on SiC", 2014 IEEE International Nanoelectronics Conference (INEC) pp. 7460437-1-4, DOI: 10.1109/INEC.2014.7460437.

(30)S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET", ECS Transactions, Vol. 75, No. 5, 293-299 (2016).