(1)Nov. 20-23, 1986, 'Microclusters', the first NEC Symposium, Hakone and Kawasaki, Japan, M. Tsukada, N. Shima, S. Tsuneyuki, and H. Kageshima, "Theory of electron attachment of van der Waals microclusters".

(2)Oct. 7-11, 1991, 'Ordering at Surfaces and Interfaces', The Third NEC Symposium, Hakone, Japan: M. Tsukada, N. Shima, Z. Zhu, K. Kobayashi, H. Kageshima, and N. Isshiki, "Mechanism of reconstruction of Si(100) surfaces".

(3)Oct. 24-25, 1991, 'Computational Approaches in Condensed-Matter Physics', The 6th Nishinomiya-Yukawa Memorial Symposium, Nishinomiya, Japan: M. Tsukada, K. Kobayashi, H. Kageshima, N. Isshiki, and Satoshi Watanabe, "Computational physics approach to scanning tunneling microscopy and spectroscopy".

(4)Sep. 19, 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan: F41, K. Shiraishi, H. Kageshima, and M. Uematsu, "Microscopic mechanisms of Si oxidation".

(5)May 30, 2001, Electrochemical Society International Semiconductor Technology Conference (ECS-ISTC 2001), Shanghai, China: #36, H. Kageshima, K. Shiraishi, and M. Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission".

(6)Jun. 22, 2001, Biannual Conference on Insulating Films on Semiconductors 2001 (INFOS 2001), Udine, Italy: H. Kageshima, M. Uematsu, and K. Shiraishi, "Theory of Si thermal oxide growth rate taking account of interfacial Si emission effect".

(7)Aug. 24, 2001, The Second Korea-Japan Workshop on Frontier Nanostructures on Surfaces, Cheju, Korea: H. Kageshima, M. Uematsu, and K. Shiraishi, "Theory of Si oxide growth rate including interfacial Si emission effects".

(8)Apr. 2, 2002, Symposium F: Defect and Impurity Engineered Semiconductors and Devices III, Materials Research Society 2002 Spring Meeting (MRS2002 Spring), San Francisco, USA: F3.3, H. Kageshima, A. Taguchi, and K. Wada, "Nitrogen-doping effect in vacancy aggregation processes in Si".

(9)May 16, 2002, 9th International Symposium on Silicon Material Science and Technology, 100th Meeting of the Electro-Chemical Society, Philadelphia, USA: N1.597, M. Uematsu, H. Kageshima, and K. Shiraishi, "Unified Theory of Thermal Silicon Oxide Growth".

(10)Aug. 6-15, 2002, XIX Congress on the International Union of Crystallography (XIX IUC), Geneva, Switzerland: Tomonori Ito, K. Shiraishi, A. Taguchi, H. Kageshima, Y. Kangawa, and K. Nakamura, "Teaching the mechanism of the epitaxial growth using the quantum mechanical approach".

(11)Oct. 21, 2002, 5th Asian Workshop on the first-principles electronic structure calculations, Seoul, Korea: H. Kageshima, K. Shiraishi, M. Uematsu, and T. Akiyama, "Si emission mechanism for the Si thermal oxidation".

(12)Nov. 26, 2003, the Forum on the Science and Technology of Silicon Materials 2003, Hayama, Japan: E.15, H. Kageshima, A. Taguchi, and K. Wada, "Study of N-doping effect on Si crystal growth by first-principles calculations".

(13)May 23, 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan: 23B-2, M. Uematsu, H. Kageshima, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion".

(14)Aug. 25-29, 2005, 17th International Conference on Ion-Surface Interactions, Zvenigorod, Russia: S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi, "Oxidation of Si(001) studied by High-Resolution RBS in Combination with Stable Isotope Tracing".

(15)May 9, 2007, 211th Meeting of The Electrochemical Society, Nineth International Symposium on Silicon Nitride, Silicon Dioxide Insulating Films and Emerging Dielectrics, Chicago, USA: H. Kageshima, "Microscopic Mechanism of Silicon Oxidation Process".

(16)Oct. 16, 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan: TuC III-1, M. Kasu, K. Ueda, H. Kageshima, and Yoshitaka Taniyasu, "Diamond RF FETs and Other Applications in Electronics".

(17)Jul. 28, 2008, International Conference on Electronic Materials 2008 (IUMRS-ICEM 2008), Sydney, Australia: A1-S3.1, M. Kasu, K. Ueda, H. Kageshima, and Yoshitaka Taniyasu, "Challenges of Diamond-based Electronic Devices".

(18)Nov. 10, 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan: 10p-h-6, H. Hibino, H. Kageshima, M. Kotsugi, and Y. Watanabe, "Local work function measurements of epitaxial few-layer graphene".

(19)Nov. 10, 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan: 10p-h-8, H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, "First-principles Study on Epitaxial Graphene Formation on SiC(0001) Surfaces".

(20)Dec. 10, 2008, The 13th Advanced Heterostructures and Nanostructures Workshop (AHNW) — Workshop on Innovative Nanoscale Devices and Systems —, Hawaii, USA: M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance measurement of deformed double-layer graphene on atomic step-structures of SiC substrate".

(21)Mar. 2, 2009, 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan: M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Novel microscopies for graphene on SiC".

(22)Jun. 24, 2009, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea: M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Metrology of microscopic properties of graphene on SiC".

(23)Oct. 12, 2009, 2009 International Conference on Silicon Carbide and Related Materials (ICSCRM), Nürnberg, Germany: Mo-P-1, H. Kageshima, H. Hibino, and M. Nagase, "Study of epitaxial graphene growth using LEEM and first-principles".

(24)Nov. 17, 2009, 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan: 17B-2-2, H. Hibino, H. Kageshima, and M. Nagase, "Structure and Electronic Properties of Epitaxial Graphene Grown on SiC Studied by Surface Electron Microscopy".

(25)Dec. 3, 2009, 2009 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2009), Kaanapali, Maui, Hawaii, USA: M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Microscopic characterization of few-layer graphene on SiC".

(26)Dec. 9, 2009, International Symposium on Atomic Level Characterizations for New Materials and Devices ’09 (ALC09), Kaanapali, Maui, Hawaii, USA: 09AM03, H. Hibino, H. Kageshima, and M. Nagase, "Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene".

(27)May 31, 2010, International Workshop on "In situ characterization of near surface processes", Eisenerz, Austria: H. Hibino, H. Kageshima, and M. Nagase, "In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC".

(28)Sep. 14, 2010, Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG2), Amelia Island, Florida, USA: H. Hibino, H. Kageshima, S. Tanabe, M. Nagase, S. Mizuno, and S. Tanaka, "Surface Electron Microscopy of Epitaxial Graphene".

(29)Oct. 27, 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: W3-02, H. Hibino, S. Tanabe, H. Kageshima, and M. Nagase, "Growth, structure, and transport properties of epitaxial graphene on SiC".

(30)Oct. 28, 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: T1-02, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Electrical contact properties of few-layer graphene on SiC substrate".

(31)Oct. 29, 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: F1-02, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on functions of graphene".

(32)Nov. 4, 2010, International Conference on Solid-State
and Integrated Circuit Technology (ICSICT-2010), Shanghai, China: I08_13, H. Kageshima, "Mechanism of nanochannel formation processes: thermal oxidation of Si  nanostructures and graphene formation on SiC".

(33)Nov. 16, 2010, Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai, Japan: Session (2)-4, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on growth, structure, and physical properties of graphene on SiC".

(34)Jun. 17, 2011, Graphene Workshop in Tsukuba, Tsukuba, Japan: H. Hibino, S. Tanabe, and H. Kageshima, "Growth and characterization of graphene on SiC ".

(35)May 24, 2011, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices '11 in conjunction with IUMAS-V (ALC '11), Seoul, South Korea: 24SS07, H. Hibino, S. Tanabe, and H. Kageshima, "Growth, structure, and transport properties of epitaxial graphene grown on SiC".

(36)Aug. 17, 2011, XX International Materials Research Congress 2011 (IMRC), Cancun, Mexico: S1-47, H. Hibino, S. Tanabe, and H. Kageshima, "Growth and electronic transport properties of monolayer and bilayer graphene on SiC".

(37)Oct. 25, 2011, The Third International Symposium on the Science and Technology of Epitaxial Graphene (STEG III), Saint Augustine, Georgia, USA: H. Hibino, S. Tanabe, and H. Kageshima, "Carrier transport in epitaxial graphene grown on SiC(0001)".

(38)Sep. 24, 2012, International Unions of Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM2012), Yokohama, Japan: B-10-I24-010, H. Hibino, S. Tanabe, and H. Kageshima, "Carrier transport in epitaxial and quasi-freestanding graphene on SiC".

(39)Aug. 15, 2013, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland: ThO3-T07-2, M. Inoue, Y. Kangawa, H. Kageshima, and K. Kakimoto, "Structural controllability of C clusters by templates effect of SiC step".

(40)Jul. 30, 2014, The 6th International Nanoelectronics Conference 2014 (IEEE INEC2015), Sapporo, Japan: Model-2-4, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Theoretical studies of graphene on SiC". 

(41)Oct. 5, 2016, Pacific RIM Meeting on Electrochemical Society and Solid-State Science (ECS-PRiME 2016), Honolulu, Hawaii, USA: G02, H. Kageshima, K. Shiraishi, and T. Endoh, "Silicon emission mechanism for oxidation process of non-planar silicon".

(42)Sep. 25, 2017, 6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2017), Como, Italy: H. Hibino, K. Ogawa, T. Suzuki, H. Kageshima, S. Uemura, D. Dojima, T. Kaneko, and Y. Ozaki, "Tip-enhanced Raman spectroscopy imaging of two-dimensional materials".

(43) Aug.23, 2021, Global Summit and Expo on Graphene and 2D Materials (2DMAT2021), Paris, France: H. Hibino, S. Wang, and H. Kageshima, "Growth mechanism and structural control of hexagonal boron nitride and its heterostructures with graphene".

(44) Sep. 7, 2021, 2021 International Conference on Solid State Devices and Materials (SSDM2021), online: H-2-06, H. Hibino, S. Wang, and H. Kageshima, "Controlled Growth of Hexagonal Boron Nitride and Heterostructures with Graphene".

(45) Jan. 11, 2022, 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs2022), online/Nagoya, Japan: F-I2, T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, and K. Shiraishi, "Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces".

(46) Mar. 9, 2022, 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022), online/Nagoya, Japan: 09aD01I, H. Hibino, S. Wang, and H. Kageshima, "Controlled growth of heterostructures of graphene and hexagonal boron nitride".

(47) Aug. 24, 2022, 2nd Global Summit on Graphene and 2D Materials (2DMAT2022), Edinburgh, Scotland/online: S. Wang, H. Kageshima, H. Hibino, and T. Taniyasu, "Development of crystal growth of high-quality 2D materials and their heterostructure".

(48) Oct. 4, 2024, International Workshop on on Epitaxial 2D Materials 2024, Shinjuku, Tokyo, Japan: Invited Talk 3, H. Kageshima, "Theoretical Study on Growth Mechanism of Epitaxial Graphene on SiC Si-face ".

(49) Nov. 22, 2024, 15th International Symposium on Atomic Level Characterizations for New Materials and Devices '24 (ALC '24), Matsue, Shimane, Japan: 22a-B-2, T. Akiyama, H. Kageshima, and K. Shiraishi, "Computational approach for reaction process at 4H-SiC/SiO2 interface ".

総合理工学部

自然科学研究科

島根大学