(1)Nov. 10, 1993, First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: H. Kageshima and M. Tabe, "First-principle calculation of core level energy shifts on the initial oxidation stage of Si(111) surface".

(2)Sep. 28, 1995, 13th International Vacuum Congress/9th International Conference on Solid Surfaces, Yokohama, Japan: H. Kageshima, "Effect of oxygen termination on electronic states of silicon quantum slabs" .

(3)Jul. 22, 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: MoP-70, H. Kageshima and K. Shiraishi, "Double bond formation mechanism for passivating Si/SiO2 interface states"  .

(4)Jul. 23, 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: TuP-18, H. Kageshima and K. Shiraishi, "Formalism for calculating momentum matrix elements with ultra-soft pseudopotentials" .

(5)Jul. 23, 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: TuP-193, H. Kageshima, K. Shiraishi, and Kyozaburo Takeda, "Electronic structures of penta-heptagonal boron-carbon networks" . 

(6)Oct. 30, 1996, Second International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: P2-11, H. Kageshima and K. Shiraishi, "Relation between band offsets and atomic structures at silicon-silicon dioxide interfaces" .

(7)Jul. 21, 1997, The Nineteenth International Conference on Defects in Semiconductors, Aveiro, Portugal: A. Taguchi and H. Kageshima, "Atomic configuration of oxygen negative-U center in GaAs".

(8)Oct. 28, 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: J8, K. Shiraishi, Y. Y. Suzuki, H. Kageshima, and T. Ito, "Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces".

(9)Oct. 29, 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: N1, H. Kageshima and K. Shiraishi, "Si-kicking-out mechanism of initial oxide formation on hydrogen-terminated Si(100) surfaces" .

(10)Dec. 1, 1997, The 1997 Fall Meeting of the Materials Research Society (MRS1997 Fall), Boston, USA: H4.3, H. Kageshima and K. Shiraishi, "First principles study of photoluminescence from silicon/silicon-oxide interfaces" .

(11)Dec. 2, 1997, The 1997 Fall Meeting of the Materials Research Society (MRS1997 Fall), Boston, USA: S5.10, H. Kageshima and K. Shiraishi, "First principles study of interfacial reaction atomic process at silicon oxidation" .

(12)Aug. 13, 1998, 8th International Conference on High Pressure Semiconductor Physics, Thessaloniki, Greece: 7-5, E. Yamaguchi, K. Shiraishi, and H. Kageshima, "Level-resonance transition of deep states produced by nitrogen vacancies in nitride semiconductors".

(13)Sep. 3, 1998, 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometer-scale Science and Technology/10th International Conference on Quantitative Surface Analysis, Birmingham, UK: SS1.ThM.1, K. Shiraishi, T. Ito, Y. Y. Suzuki, H. Kageshima, K. Kanisawa, and H. Yamaguchi, "Microscopic Investigation of the Surface Phase Transition on GaAs(001) Surfaces".

(14)Sep. 10, 1998, 1998 International Conference on Solid State Devices and Materials, H.ma, Japan: D-9-1, H. Kageshima and K. Shiraishi, "First principles study of the oxide growth process on silicon surfaces and at silicon-oxide/silicon interfaces" .

(15)Nov. 20, 1998, International Symposium on Surface and Interface: Properties of Different Symmetry Crossing (ISSI-PDSC), Tokyo, Japan: FA4, H. Kageshima and K. Shiraishi, "Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces" .

(16)Nov. 30, 1998, The 1998 Fall Meeting of the Materials Research Society (MRS1998 Fall), Boston, USA: C3.10, H. Kageshima and K. Shiraishi, "First-principles study of physical properties of silicon emission during silicon oxidation" .

(17)Dec. 2, 1998, The 1998 Fall Meeting of the Materials Research Society (MRS1998 Fall), Boston, USA: F8.34, K. Shiraishi, M. Nagase, S. Horiguchi, and H. Kageshima, "Theoretical investigation of effective quantum dots induced by strain in semiconductor wires" .

(18)Jun. 12, 1999, 1999 Silicon Nanoelectronics Workshop, Kyoto, Japan: session 2, 2, S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and Katsumi Murase, "Mechanism of potential profile formation in Si SETs using pattern dependent oxidation (PADOX)".

(19)Jul. 12, 1999, The 9th International Conference on Modulated Semiconductor Structures (MSS-9), Fukuoka, Japan: D19, K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, and M. Uematsu, "Designing of silicon effective quantum dots by using the oxidation-induced strain: A theoretical approach" .

(20)Sep. 14, 1999, International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), Miyagi, Japan: D-3, K. Shiraishi, Koji Sumitomo, Y. Yoshimoto, H. Kageshima, Y. Kobayashi, T. Ito, T. Ogino, and M. Tsukada, "Theoretical and experimental studies on the microscopic origin of the Ge segregation on Si(001) surfaces: crucial effect of configurational entropy" .

(21)Sep. 22, 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: D4-3, S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and Katsumi Murase, "Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent-Oxidation (PADOX)" .

(22)Sep. 23, 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: A9-3, H. Kageshima and K. Shiraishi, "Universal theory of Si oxidation rate taking account of interfacial Si emission" .

(23)Oct. 22, 1999, First International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-1), Tokyo, Japan: 22p-3-2, H. Kageshima and K. Shiraishi, "Theory of Si Oxide Growth Rate Taking Account of Interfacial Si Emission: Relation with Nitridation, Oxynitridation, and Dielectric Reliability" .

(24)Oct. 26, 1999, Third International Symposium on Control of Semiconductor Interfaces (ISCSI-3), Karuizawa, Japan: A1-2, H. Kageshima, K. Shiraishi, Hiroya Ikeda, Shigeaki Zaima, and Yukio Yasuda, "Selectivity rule for O adsorption position on dihydride Si(100) surfaces" .

(25)Nov. 29, 1999, The 1999 Fall Meeting of the Materials Research Society (MRS1999 Fall), Boston, USA: T1.3, H. Kageshima and K. Shiraishi, "Universal Theory of Oxide Growth Rate on Silicon" .

(26)Jul. 9-14, 2000, Gordon Research Conference on Point and Line Defects in Semiconductors, New London, New Hampshire, USA: K. Wada, H. Kageshima, and A. Taguchi, "Theoretical investigation of nitrogen-doping effect in vacancy aggregation processes in Si".

(27)Sep. 19, 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan: E35, H. Kageshima, A. Taguchi, and K. Wada, "Theoretical investigation of suppression of vacancy aggregation due to nitrogen in Si" .

(28)Oct. 18, 2000, The International Symposium on Surface and Interface - Properties of Different Symmetry Crossing - 2000 (ISSI-PDSC 2000), Nagoya, Japan: P-66, H. Kageshima, K. Shiraishi, and M. Uematsu, "New picture for the mechanism of thermal Si oxide growth process" .

(29)Jun. 8, 2001, European Materials Research Society 2001 Spring Meeting (E-MRS 2001 Spring), Strasbourg, France: A-VIII.4, M. Uematsu, H. Kageshima, and K. Shiraishi, "Microscopic Mechanism of Thermal Silicon Oxide Growth".

(30)Sep. 27, 2001, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan: B-6-1, M. Uematsu, H. Kageshima, and K. Shiraishi, "Interfacial Silicon Emission in Dry Oxidation - the Effect of H and Cl" .

(31)Jun. 28, 2002, The 44th Electronic Materials Conference of The Minerals, Metals, and Materials Society (44EMC-TMS), Santa Barbara, USA: GG6, S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi, "Self-Diffusion of Si in Thermally Grown Amorphous SiO2".

(32)Jul. 29, 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK: H57, H. Kageshima, A. Taguchi, and K. Wada, "Theoretical investigation of nitrogen doping effect on aggregation processes of Si interstitials" .

(33)Jul. 29, 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK: H16, T. Akiyama and H. Kageshima, "First-princplese study of reaction of atomic oxygen at SiO2/Si(100) interfaces" .

(34)Oct. 24, 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan: T. Ito, K. Nakamura, Y. Kangawa, K. Shiraishi, A. Taguchi, and H. Kageshima, "Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films".

(35)Oct. 24, 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan: T. Akiyama and H. Kageshima, "Microscopic mechanism of interfacial reaction during Si oxidation".

(36)May 1, 2003, 203th Meeting of the Electrochemical Society (203th ECS), Paris, France: 839, M. Uematsu, H. Kageshima, and K. Shiraishi, "Oxidation Simulation of Silicon Nanostructure on Silicon-on-Insulator Substrates ".

(37)Jul. 29, 2003, 22th International Conference on Defects in Semiconductors (ICDS-22), Århus, Denmark: PA106, H. Kageshima, A. Taguchi, and K. Wada, "Formation of stable N-V-O complex in Si" .

(38)Sep. 17, 2003, 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Japan: P3-21L, T. Akiyama and H. Kageshima, "Origin of Interfacial Reaction Constant for Si Thermal Oxidation" .

(39)Nov. 10, 2003, The 6th Asian Workshop on First-Principles Electronic Structure Calculations (AWFPESC-6), Tsukuba, Japan: P3, T. Akiyama and H. Kageshima, "First-principles Investigation for Reaction Mechanisms of Oxygen at SiO2/Si(100) interface" .

(40)Nov. 10, 2003, The 6th Asian Workshop on First-Principles Electronic Structure Calculations (AWFPESC-6), Tsukuba, Japan: P26, H. Kageshima, A. Taguchi, and K. Wada, "Effect of N doping on Si crystal growth" .

(41)Nov. 12, 2003, International Symposium on Functional Semiconductor NanoSystems (FSNS 2003), Atsugi, Japan: P15, T. Akiyama and H. Kageshima, "Theoretical Study of Oxygen Reaction Mechanism at SiO2/Si Interfaces" .

(42)Nov. 18, 2003, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan: 18P042, T. Ito, K. Tsutsumida, K. Nakamura, Y. Kangawa, K. Shiraishi, A. Taguchi, and H. Kageshima, "Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4x4) surfaces" .

(43)Nov. 20, 2003, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan: 20D68, H. Kageshima, T. Akiyama, K. Akagi, M. Uematsu, K. Shiraishi, and S. Tsuneyuki, "Stability of excess Si defects near SiO2/Si(100) interfaces" .

(44)Dec. 1, 2003, The 2003 Fall Meeting of the Materials Research Society (MRS2003 Fall), Boston, USA: E3.10, H. Kageshima, T. Akiyama, K. Akagi, M. Uematsu, K. Shiraishi, and S. Tsuneyuki, "First-principles study of behaviour of excess Si atoms around ultra-thin Si-oxide/Si interfaces" .

(45)Dec. 1, 2003, The 2003 Fall Meeting of the Materials Research Society (MRS2003 Fall), Boston, USA: KK2.8, H. Kageshima, A. Taguchi, and K. Wada, "First-principles investigations of N-V-O complexes in Si" .

(46)Dec. 1, 2003, The 2003 Fall Meeting of the Materials Research Society (MRS2003 Fall), Boston, USA: E3.7, T. Akiyama and H. Kageshima, "First-principles investigation for reaction of oxygen at ultrathin Si-oxide/Si interface" .

(47)Dec. 1, 2003, The 2003 Fall Meeting of the Materials Research Society (MRS2003 Fall), Boston, USA: E3.4, H. Omi, M. Uematsu, H. Kageshima, and T. Ogino, "Kinetics of thermal oxidation at the Si(001)-SiO2 interface" .

(48)May 27, 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan: M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi, "Enhancement of Si Self-Diffusion by the Existence of B in SiO2" .

(49)May 27, 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan: S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, Y. Takahashi, and K. Shiraishi, "The effect of the Si/SiO2 interface on boron diffusion in SiO2" .

(50)May 28, 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan: T. Akiyama, H. Kageshima, and T. Ito, "First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface" .

(51)May 28, 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan: H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi, "Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces" .

(52)Jul. 27, 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA: H5.113, T. Akiyama and H. Kageshima, "Microscopic Theory of Oxygen Reaction Mechanisms at SiO2/Si(100) Interface" .

(53)Jul. 27, 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA: H5.108, H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi, "First-principles study of excess Si-atom stability around Si-oxide/Si interfaces" . 

(54)Jul. 27, 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA: J5.093, H. Kageshima, A. Taguchi, and K. Wada,  "Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics" . 

(55)Sep. 2, 2004, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2004), Munich, Germany: M. Uematsu, H. Kageshima, and K. Shiraishi, "Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures".

(56)Dec. 1, 2004, The 2004 Fall Meeting of the Materials Research Society (MRS2004 Fall), Boston, USA: II7.12, K. Uchida, H. Kageshima and H. Inokawa, "Ab-initio Study of Redox Effects on Atomic and Electronic Structure of 4,4'-Terphenyldithiol" .

(57)Dec. 9, 2004, The 12th Internatioinal Colloquium on Scannning Probe Microscopy (ICSPM12), Higashi-Izu, Japan: 4.15, K. Uchida, H. Kageshima, and H. Inokawa, "Charge Injection Effects in a Single Phenyldithiol Molecule" .

(58)Mar. 3, 2005, Third Internatioinal Conference on Molecular Electronics and Bioelectronics (M&BE3), Tokyo, Japan: 3P-C29, K. Uchida, H. Kageshima, and H. Inokawa, "First-principles Study of Electrode Effects on Single-Electron Molecular Devices" .

(59)May 23, 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan: 23P1-36, T. Akiyama, KE. Kawamoto, H. Kageshima, M. Uematsu, Koji Nakamura, and T. Ito, "A First-principles Study of O2 Diffusion in Compressively Strained High-Density Silicon Oxides" .

(60)Jun. 28, 2005, 17th International Conference on Ion Beam Analysis, Sevilla, Spain: P-Tue, S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi, "Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS" .

(61)Jul. 27, 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan: TuP.20, A. Taguchi, H. Kageshima, and K. Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects" .

(62)Jul. 28, 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan: ThP.7, H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation" .

(63)Jul. 28, 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan: ThP.64, S. Yabuuchi, E. Ohta, H. Kageshima, and A. Taguchi, "First-principles study of strain effects on Mn in Si" .

(64)Sep. 20, 2005, Psi-k 2005 Conference, Schwäbisch Gmünd, Germany: N10, K. Uchida, H. Kageshima, and H. Inokawa, "First-principles study of field-effect doping in SrTiO3 by the enforced Fermi-energy difference method" .

(65)Nov. 14, 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan: P1-12, K. Uchida, H. Kageshima, and H. Inokawa, "First-principles study of field-effect doping in nano-scale systems by the enforced Fermi-energy difference method" .

(66)Nov. 17, 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan: Th-A8, H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, and K. Shiraishi, "Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces" .

(67)Feb. 28, 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan: PMo-30, S. Yabuuchi, E. Ohta, and H. Kageshima, "Strain effects on Mn in Si: First-principles study" .

(68)Feb. 28, 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan: PTu-33, K. Uchida, H. Kageshima, H. Inokawa, S. Ohno, S. Yabuuchi, H. Maki, and T. Sato, "Modulated Ferromagnetism of the Pd Thin Film by Electric Field — A First-Principles Prediction —" .

(69)Apr. 18, 2006, Computational Science Workshop 2006 (CSW2006), Tsukuba, Ibaraki, Japan: K. Uchida, H. Kageshima, H. Inokawa, S. Ohno, S. Yabuuchi, H. Maki, and T. Sato, "Ferromagnetic Phase Transition Induced by Field-Effect Doping -- A First-Principles Prediction --" .

(70)Jul. 25, 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria: TuA3g.2, H. Kageshima, A. Taguchi, and K. Wada, "Theoretical comparison of nitrogen-doping effects on silicon crystal growth with oxygen-doping effects" .

(71)Jul. 27, 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria: ThM1e.3, H. Kageshima and M. Uematsu, "Strain dependence of stabilities of Si-related defects in Si-oxide" .

(72)Sep. 14, 2006, International Conference on Solid State Devices and Materials (2006 SSDM), Yokohama, Japan: P-1-23, H. Kageshima, M. Uematsu, T. Akiyama, and T. Ito, "Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation" .

(73)Nov. 9, 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices — Science and Technology — (IWDTF2006), Kawasaki, Japan: S3-4, H. Kageshima and M. Uematsu, "Theoretical study on emission of Si-related species at Si-oxide/Si interfaces" .

(74)Nov. 9, 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices — Science and Technology — (IWDTF2006), Kawasaki, Japan: P2-3, T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito, "Suppression of oxidation reaction by oxidation-induced strain at ultrathin Si-oxide/Si interface" .

(75)May 30, 2007, The 1st Conference of New Diamond and Nano Carbons (NDNC), Toyonaka, Osaka, Japan: P5-43, H. Kageshima and M. Kasu, "Theoretical Study of Al adsorption on clean, H-, and O-terminated diamond (100) surfaces" .

(76)Jun. 11, 2007, The 2007 Silicon Nanoelectronics Workshop (SNW2007), Kyoto, Japan: 7-3, S. Yabuuchi, Y. Ono, M. Nagase, H. Kageshima, A. Fujiwara, and E. Ohta, "Magnetic properties of manganese nanosilicide in silicon" .

(77)Jul. 2, 2007, 17th International Vacuum Congress (IVC17)/13th International conference on  Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden: NSP1-87, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe" .

(78)Jul. 2, 2007, 17th International Vacuum Congress (IVC17)/13th International conference on  Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden: NSP1-118, S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara and E. Ohta, "Theoretical study on magnetic properties of manganese nanosilicide in silicon" .

(79)Jul. 3, 2007, 17th International Vacuum Congress (IVC17)/13th International conference on  Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden: TSFE-Or3, T. Akiyama, H. Kageshima, M. Uematsu and T. Ito, "Microscopic processes of oxidation reaction at SiO2/Si(100) interfaces with oxidation-induced strain" .

(80)Jul. 4, 2007, 17th International Vacuum Congress (IVC17)/13th International conference on  Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden: SS02-266, H. Kageshima and A. Fujiwara, "First-principles study on capacitor made of silicon (111) nano-slabs" .

(81)Aug. 24, 2007, 7th Topical Workshop on Heterostructure Microelectronics (TWHM2007), Kisarazu, Japan: FrB-8, M. Kasu, K. Ueda, H. Kageshima, Y. Yamauchi, and Toshiki Makimoto, "RF Equivalent-Circuit Analysis of Submicron-Gate Diamond FETs" .

(82)Oct. 16, 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan: TuE P17, H. Kageshima and M. Kasu, "First-principles Study on Vacancy-Hydrogen Complexes in Diamond" .

(83)Oct. 30, 2007, The 10th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN10), Higashi-H.ma, Japan: P-22, H. Kageshima and A. Fujiwara, "Property of Silicon Quantum Capacitors" .

(84)Oct. 30,2007, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices '07 (ALC'07), Kanazawa, Japan: TuA-7, H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, "Thickness determination of graphene layers formed on SiC using low-energy electron microscopy" .

(85)Nov. 13, 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan: 13Aa-6, H. Kageshima and M. Kasu, "Theoretical study on hydrogen terminated dependence of Schottky barrier height for Al/diamond (100) interfaces" .

(86)Nov. 14, 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan: 14Ca-5, H. Hibino, H. Kageshima, F.-Z. Guo, F. Maeda, M. Kotsugi, and Y. Watanabe, "Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)" .

(87)Dec. 6, 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan: S4-52, H. Hibino, M. Nagase, H. Kageshima, F. Maeda, Y. Kobayashi, and H. Yamaguchi, "Number-of-Layers Distribution in Graphene Layers Formed on SiC(0001)" .

(88)Dec. 6, 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan: S4-54, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Conductance of Nano-graphene Island Measured Using Nanogap Electrodes Integrated on Scanning Probe" .

(89)Jun. 15, 2008, The 2008 IEEE Silicon Nanoelectronics Workshop (SNW-08), Honolulu, Hawaii, USA: S1105, H. Kageshima and A. Fujiwara, "First-principles Study on Inversion Layer Properties of Double-Gate Atomically Thin Silicon Channel" .

(90)Jul. 22, 2008, The 2008 International Conference on Nanoscience + Technology (ICN+T 2008), Keystone, Colorado, USA: NM1-TuM6, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance of graphene layer near the buried atomic steps on SiC substrate" .

(91)Sep. 8, 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain: H. Kageshima and M. Kasu, "First-principles Study on Schottky Barrier Height of H-terminated Diamond (100)" .

(92)Sep. 8, 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain: M. Kasu, M. Kubovic, Y. Yamauchi, K. Ueda, and H. Kageshima, "Structural and Electrical Properties of H-terminated Diamond Field-effect Transistor".

(93)Oct. 21, 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan: TuB II-4, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "In plane conductance images of few-layer graphene on SiC substrate" .

(94)Oct. 22, 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan: WeA II-5, H. Kageshima and A. Fujiwara, "First-principles Study on Inversion Layer Capacitance of Atomically Thin Si Channel Double Gate Field Effect Transistor" .

(95)Nov. 5,2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan: P1-21, H. Kageshima, T. Akiyama, M. Uematsu, and T. Ito, "Theoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide" .

(96)Nov. 7, 2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan: S7-4, T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito, "Reaction Mechanisms of H2O Molecules at SiO2/Si Interfaces during Silicon Thermal Oxidation" .

(97)Nov. 10, 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan: 10p-p-101, H. Omi, H. Kageshima, M. Uematsu, T. Kawamura, Y. Kobayashi, S. Fujikawa, Y. Tsusaka, Y. Kagoshima, and J. Matsui, "Temperature dependent roughening at the growing SiO2/Si(001) interface" .

(98)Nov. 17, 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan: M3-3, H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, and H. Yamaguchi, "Evaluation of number of graphene layers grown on SiC: SPM and Raman spectroscopy studies" .

(99)Nov. 17, 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan: M3-4, H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, "Theoretical study on epitaxial graphene formation on SiC(0001) surfaces" .

(100)Nov. 18, 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan: T1-2, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance measurement of thermally grown graphene on SiC substrate" .

(101)Jan. 23, 2009, International Symposium on Nanoscale Transport and Technology (ISNTT), Atsugi, Japan: M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local conductance of deformed graphene near atomic steps on SiC".

(102)Jun. 14, 2009, The 2009 IEEE Silicon Nanoelectronics Workshop (SNW-09), Kyoto, Japan: 7-1, H. Kageshima and A. Fujiwara, "First-principles Study on Channel Thickness Dependence of Inversion Layer Dielectric Constant in Double-Gate Atomically Thin Silicon".

(103)Sep. 10, 2009, The 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2009), Athens, Greece: O72, M. Kubovic, M. Kasu, T. Yamauchi, and H. Kageshima, "Increase of Hole Concentration of Hydrogen-terminated Diamond Surface After Adsorption of Specific Gas Species" .

(104)Oct. 7, 2009, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan: K-1-3, J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A. Fujiwara, "Tunnel spectroscopy of electron subbands in thin SOI MOSFETs" .

(105)Jul. 25, 2010, Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010) , Tsukuba, Japan: 25-AM-IV-4, Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and E. Ota, "Significance of the Interface regarding Magnetic Properties of Mn-Nanosilicide in Silicon".

(106)Jul. 26, 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010) , Seoul, Korea: TuD1-2, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects" .

(107)Jul. 26, 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010) , Seoul, Korea: P1-030, H. Kageshima and A. Fujiwara, "Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate" .

(108)Aug. 24, 2010, 18th International Vacuum Congress (IVC-18)/International Conference on Nanoscience and Technology (ICN+T 2010)/14th International Conference on Surfaces Science (ICSS-14)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-5), BE.ng, China: P1-EmP1-18, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Contact conductance measurement of nano-membrane structure of graphene on SiC" .

(109)Sep. 23, 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: F-5-4, J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara, "Strong stark effect of electroluminescence in thin SOI MOSFETs" .

(110)Sep. 23, 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: J-4-3, S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, "Observation of bandgap in epitaxial bilayer graphene field effect transistors" .

(111)Dec. 2, 2010, The 2010 Fall Meeting of the Materials Research Society (MRS2010 Fall), Boston, USA: B9.2, S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, "Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC" .

(112)2011年1月11日, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: PTu-14, J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara, "Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors" .

(113)Jan. 12, 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: PWe-12, Y. Sekine, H. Hibino, Katsuya Oguri, Tatsushi Akasaki, H. Kageshima, M. Nagase, and H. Yamaguchi, "Surface-enhanced Raman spectroscopy of graphene grown on SiC" .

(114)Jan. 12, 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: PWe-10, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface" .

(115)Jan. 20, 2011, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), Tokyo, Japan: P-24, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Theoretical study on epitaxial graphene growth on SiC(0001) surface" .

(116)Aug. 3, 2011, The 6th International School and Conference on Spintronics and Quantum Infromation Technology (SPINTECH6), Matsue, Japan: WP-86, Y. Sekine, H. Hibino, Katsuya Oguri, Tatsushi Akasaki, H. Kageshima, M. Nagase, and H. Yamaguchi, "Surface-enhanced Raman scattering of graphene on SiC" .

(117)Sep. 5, 2011, 22nd European Conference on Diamond, Diamond-Like-Materials, Carbon-Nanotubes, and Nitrides (Diamond2011), Garmisch-Partenkirchen, Germany: P1.40, Masahito Inoue, Y. Kangawa, H. Kageshima, K. Wakabayashi, and K. Kakimoto, "Anisotropic growth mechanism of graphene on a vicinal SiC(0001) surface" .

(118)Sep. 30, 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: KM-6-3, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)" .

(119)Sep. 30, 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: K-9-1, S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino, "Electrical characterization of bilayer graphene formed by hydrogen intercalation of monolayer graphene on SiC(0001)" .

(120)Dec. 14, 2011, International Symposium on Surface Science -Towards Nano-, Bio-, and Green Inovation- (ISSS-6), Mizue, Tokyo, Japan: 14amB-1-2, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Role of steps and edges in epitaxial graphene growth on SiC(0001)" .

(121)Jun. 4, 2012, Sixth International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2012), Delft, Netherland: Poster Session I-115, S. Tanabe, M. Takamura, Y. Sekine, H. Kageshima, and H. Hibino, "Hydrogen-intercalation effects on electronic transport of mono- and bi-layer epitaxial graphene on SiC(0001)" .

(122)Jul. 31, 2012, 31st International Conference on Physics of Semiconductors (ICPS2012), Zürich, Swiss: 31.17, M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto, "First principles approach to C aggregation process during 0th graphene growth on SiC(0001)" .

(123)Aug. 2, 2012, 31st International Conference on Physics of Semiconductors (ICPS2012), Zürich, Swiss: 61.45, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Role of Step in Initial Stage of Graphene Growth on SiC(0001)" .

(124)Sep. 27, 2012, 2012 Internatioinal Conference on Solid State Devices and Materials (SSDM2012), Kyoto, Japan: C-8-3, H. Kageshima and H. Hibino, "Theory of Graphene on SiC(11-20)a Substrate" .

(125)Nov. 29, 2012, The 2012 Fall Meeting of the Materials Research Society (MRS2012 Fall), Boston, USA: W14.11, Y. Murata, M. Takamura, H. Kageshima, and H. Hibino, "Hydrogen Desorption from Quasi-Free-Standing Monolayer Graphene".

(126)Jan. 29, 2013, 5th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials (ISPlasma2013), Nagoya, Japan: P1051C, M. Inoue, Y. Kangawa, H. Kageshima, and K. Kakimoto, "Tight-binding approach to C clustering at a step of SiC(0001)" .

(127)Mar. 19, 2013, American Physics Society March Meeting 2013 (APS2013 March), Baltimore, USA: H1.00024, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, and M. Uematsu, "Diffusion of carbon oxides in SiO2 during SiC oxidation" .

(128)Jun. 5, 2013, The 7th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2013), Chemnitz, Germany: GW2013-27, Carlo M. Orofeo, S. Suzuki, H. Kageshima and H. Hibino, "Growth and Low-energy Electron Microscopy Characterization of Monolayer Hexagonal Boron Nitride on Epitaxial Cobalt" .

(129)Sep. 10, 2013, 5th International Conference on Recent Progress in Graphene Research (RPGR2013), Meguro, Tokyo, Japan: 10p-P1-08, H. Kageshima and H. Hibino, "Electronic properties of epitaxial graphene on SiC(11-20)a substrate"  .

(130)Sep. 10, 2013, 5th International Conference on Recent Progress in Graphene Research (RPGR2013), Meguro, Tokyo, Japan: 10a-B1-O1, Y. Sekine, H. Hibino, H. Kageshima, Kenichi Sasaki and Tatsushi Akazaki, "Polarized Raman spectroscopy of graphene nanoribbons embedded in SiC ".

(131)Sep. 17, 2013, 2013 JSAP-MRS Joint Symposia, Kyoh-tanabe, Japan: 17p-PM1-5, M. Inoue, Y. Kangawa, H. Kageshima and K. Kakimoto, "Structural control of C clusters by a step on SiC(0001) " .

(132)Sep. 27, 2013, 2013 International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, Japan: C-6-5, S. Tanabe, M. Takmura, Y. Harada, H. Kageshima, and H. Hibino, "Effect of hydrogen annealing on electronic transport properties of quasi-free-standing monolayer graphene".

(133)Oct. 3, 2013, The International Conference on Silicon-Carbide Related Materials (ICSCRM2013), Miyazaki, Japan: Th-P-51, M. Inoue, Y. Kangawa, H. Kageshima, S. Tanaka, and K. Kakimoto, "SiC step designing for epitaxial graphene growth" .

(134)Oct. 2, 2013, The International Conference on Silicon-Carbide Related Materials (ICSCRM2013), Miyazaki, Japan: We-2B-2, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, "Stability and reactivity of [11-20] step in initial stage of epitaxial graphene growth on SiC(0001)".

(135)Jun. 26, 2014, 56th Electronic Materials Conference (EMC 2014), Santa Barbara, California, USA: T2, A. Ito, T. Akiyama, K. Nakamura, T. Ito, K. Shiraishi, H. Kageshima, and M. Uematsu, "Initial reaction processes on SiC surface during thermal oxidation: A first-principles study".

(136)Nov. 3, 2014, The 7th International Symposium on Surface Science (ISSS7), Matsue, Japan: 3pA2-1, H. Hibino, C. M. Orofeo, H. Kageshima, S. Suzuki, and S. Mizuno, "LEED structural analysis of monolayer h-BN grown by CVD".

(137)Nov. 3, 2014, The 7th International Symposium on Surface Science (ISSS7), Matsue, Japan: PN-40, H. Kageshima and H. Hibino, "First-principles Study of Graphene on SiC(000-1) C face".

(138)Nov. 3, 2014, The 7th International Symposium on Surface Science (ISSS7), Matsue, Japan: 3pB1-3, Y. Sekine, H. Hibino, A. Iwamoto, M. Nagase, H. Kageshima, and T. Akazaki, "Precise analysis of the buffer layer at the graphene/SiC interface by surface-enhanced Raman scattering spectroscopy using gold nanoparticles".

(139)Nov. 3, 2014, The 7th International Symposium on Surface Science (ISSS7), Matsue, Japan: A. Ito, T. Akiyama, K. Nakamura, T. Ito, K. Shiraishi, H. Kageshima, M. Uematsu,"Theoretical Investigations for Initial Oxidation Processes on SiC Surfaces".

(140)   Sep. 29, 2015, 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan: PS-13-17, S. Urasaki, and H. Kageshima, "Theoretical Study of Multiatomic Vacancies in Hexagonal Boron Nitride".

(141)Sep. 29, 2015, 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan: PS-1-17, S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation".

(142)Oct. 28, 2015, 10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15 (ALC'15), Matsue, Japan: 28p-B-7, H. Kageshima and H. Hibino, "Origin of Epitaxial Relation of Graphene formed on SiC".

(143)    Nov. 4, 2015, The 2015 International Workshop on Dielectric Thin Films for Future ULSI Devices (2015IWDTF), Tokyo, Japan: 5-4, H. Kageshima, K. Shiraishi, and T. Endoh, "Extension of Si Emission Model for Silicon Nanowire Oxidation".

(144)Aug. 9, 2016, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan: TuP-J01-19, K. Okada and H. Kageshima, "First-principles Study of Initial Stage of MoS2 Crystal Growth".

(145)   Sep. 28, 2016, 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan: PS-13-02, Syu Urasaki and Hiroyuki Kageshima, "First Principles Calculation of Charged Vacancies in Single-layer Molybdenum Disulfide".

(146)  Oct. 5, 2016, Pacific RIM Meeting on Electrochemical Society and Solid-State Science (PRiME 2016), Honolulu, Hawaii, USA: G02-1448, S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "First Principles Study on the Strain Dependence of Thermal Oxidation and Hydrogen Annealing Effect at Si/SiO2 Interface in V-Mosfet".

(147)    Nov. 24, 2016, 7th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, USA: O-11, S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "Face orientation dependency on thermal oxidation and hydrogen annealing at the Si/SiO2 Interface for the three-dimensional devices".

(148)Aug. 3, 2017, 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Shimane, Japan: ThA1-1, S. Urasaki and H. Kageshima, "First-principles Study on Chraged Vacancies of h-BN and MoS2".

(149)Aug. 3, 2017, 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Shimane, Japan: ThP-7, H. Kageshima, K. Shiraishi, and T. Endoh, "Roles of Si-related Interstitials in Oxidation of Low-dimensional Si Nanostructures".

(150)Aug. 3, 2017, 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Shimane, Japan: ThP-10, T. Nagura, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "Theoretical study on thermal oxidation processes of Si(111)/SiO2 interfaces" .

(151)Sep. 21, 2017, 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Miyagi, Japan: PS-13-10, H. Kageshima and S. Urasaki, "Theoretical Study of Supporting Effect on Vacancies in MoS2".

(152)Sep. 21, 2017, 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Miyagi, Japan: PS-14-02, T. Akiyama, S. Hori, K. Nakamura, T. Ito, H. Kageshima, and K. Shiraishi, "Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation".

(153)Sep. 22, 2017, 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Miyagi, Japan: K-6-02, T. Nagura, S. Kawachi, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "Guiding principles of V-MOSFET fabrication based on Si emission model".

(154)Sep. 28, 2017, Junjiro Kanamori Memorial International Symposium, Tokyo, Japan: P6, S. Sakuragi, H. Tajiri, H. Kageshima, and T. Sato, "Tailoring the ferromagnetism of Pd(100) ultrathin films via quantum-well states".

(155)Sep. 30, 2017, International Conference on Materials and Systems for Sustainability (ICMaSS2017), Nagoya, Aichi, Japan: P-1-8, T. Nagura, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "First-Principles Study on interface orientation dependence of Si thermal oxidation".

(156) Oct. 10, 2017, International Conference on Magnetism and Magnetic Materials (Magnetic Materials 2017), London, UK: Y. Ban, K. Komatsu, S. Sakuragi, T. Taniyama, H. Kageshima, and T. Sato, "Magneto-elastic effect on ferromagnetism induced by quantum-well states in Pd thin film".

(157)Nov. 20, 2017, International Workshop on Dielectric Thin Films (IWDTF2017),  Nara, Japan: P-21, Y. Yajima, K. Shiraishi, T. Endoh, and H. Kageshima, "Oxygen Concentration Dependence of Silicon Oxide Dynamical Properties”.

(158)Nov. 22, 2017, International Workshop on Dielectric Thin Films (IWDTF2017),  Nara, Japan: S6-4, H.  Kageshima, K. Shiraishi, and T. Endoh, "Reconsideration of Si Pillar Thermal Oxidation Mechanism”.

(159)Nov. 23, 2017, International Symposium on Epitaxial Graphene (ISEG2017), Nagoya, Japan: P23, H. Kageshima, and H. Hibino, "Theoretical study on graphene growth mechanism on SiC substrate”.

(160)Nov. 23, 2017, International Symposium on Epitaxial Graphene (ISEG2017), Nagoya, Japan: P27, H. Hibino, S. Mizuno, K. Nishiguchi, and H. Kageshima, "LEEM/LEED analysis of exfoliated few-layer MoS2 on epitaxial graphene”.

(161)Nov. 25, 2017, International Symposium on Epitaxial Graphene (ISEG2017), Nagoya, Japan: O23, H. Hibino, and H. Kageshima, "Carbonization-driven motion of Si islands on epitaxial graphene”.

(162)Nov. 28, 2017, 2017 Fall Meeting of Materials Research Society (MRS Fall 2017), Boston, MA, USA: EM05.09.30, T. Nagura, S. Kawachi, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "Theoretical study on interface orientation dependence of Si thermal oxidation”.

(163) Jun. 18, 2018, 2018 IEEE Silicon Nanoelectronics Workshop (SNW2018), Honolulu, Hawaii, USA: P2-19, T. Nagura, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, “First-principles studies on the effect of O atoms in the substrate on the oxidation of vertical body channel MOSFETs”.

(164) Sep. 14, 2018, 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, Japan: PS-1-04, Y. Yajima, K. Shiraishi, T. Endoh, and H. Kageshima, “First-Principles Study on Shape Degradation during Oxidation Process for Three-Dimensional Structure Devices”.

(165) Oct. 22, 2018, 14th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures (ACSIN-14), Sendai, Japan: 22P095, H. Kageshima, S. Wang, and H. Hibino, “First-principles Study of Carbon Adsorption on Cu(111) Surface Covered with Graphene or h-BN”.

(166) Oct. 22, 2018, 14th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures (ACSIN-14), Sendai, Japan: 22P118, Y. Yajima, K. Shiraishi, T. Endoh, and H. Kageshima, “First-principles Study of Pressure and Oxygen Concentration Dependence of Dynamical Properties in Silicon Oxide”.

(167) Oct. 23, 2019, 12th International Symposium on Atomic Level Characterizations for New Materials and Devices '19 (ALC '19), Kyoto, Japan: 23p-4-4, H. Kageshima, S. Wang, and H. Hibino, “Theoretical Study on C Adsorbate at Graphene/Cu(111) or h-BN/Cu(111) Interfaces”.

(168) Nov. 18, 2019, 2019 International Workshop on Dielectric Thin Films for Future Electron Devices -- Science and Technology -- (2019 IWDTF), Tokyo, Japan: p-7, Y. Yajima, H. Kageshima, K. Shiraishi, and T. Endoh, “Pressure and SiO cooperative effect on diffusivity in Si oxide”.

(169) Nov. 20, 2019, 2019 International Workshop on Dielectric Thin Films for Future Electron Devices -- Science and Technology -- (2019 IWDTF), Tokyo, Japan: S-7-3, T. Shimizu, T. Akiyama, A.-M. Pradipto, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi, “Ab Initio Calculations for the Effect of Wet Oxidation Condition on the Reaction Processes at 4H-SiC/SiO2 Interface”.

(170) Sep. 28, 2020, 2020 International Conference on Solid State Devices and Materials (SSDM2020), online: H-1-05, H. Kageshima, S. Wang, and H. Hibino, “Origin of Growth Direction Selectivity in CVD of h-BN/Graphene Heterostructure”.

(171) Sep. 29, 2020, 2020 International Conference on Solid State Devices and Materials (SSDM2020), online: D-6-03, T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi, "Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO2 interface under dry oxidation condition".

(172) Oct. 6, 2020, Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2020), online: D01-1354, T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi, "Effects of wet ambient on dry oxidation processes at 4H-SiC/SiO2 interface: an ab initio study".

(173) Jan. 20, 2021, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021), online: T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi, "A systematic approach for the interfacial reaction of O2 molecule under wet oxidation condition at 4H-SiC/SiO2 interface".

(174) Sep. 21, 2021, Grapehen Week 2021, online: S. Wang, J. Crowther, H. Kageshima, H. Hibino, and Y. Taniyasu, "Large scale growth of hexagonal boron nitride/graphene bilayer heterostructure via epitaxial intercalation".

(175) Nov. 5, 2021, International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021), online: Area 2, F. Nanataki, M. Araidai, H. Kageshima, and K. Shiraishi, "First-principles studies on the effects of O atoms in the substrate on the oxidation of a vertical Si nanopillar".

(176) Nov. 30, 2021, The 9th International Symposium on Surface Science ~Toward Sustainable Development~ (ISSS-9), online: 30pA-1, H. Kageshima, S. Wang, and H. Hibino, "Theoretical Study on Role of Edge Termination in CVD Growth of hBN/Graphene Heterostructure on Cu Surface".

(177) Dec. 16, 2021, The International Symposium on Novel maTerials and quantum Technology (ISNTT2021), online: p2-05, H. Kageshima, S. Wang, and H. Hibino, "Theoretical study on hBN/graphene heterostructure CVD growth".

(178) Dec. 17, 2021, The International Symposium on Novel maTerials and quantum Technology (ISNTT2021), online: S10-2, S. Wang, J. Crowther, H. Kageshima, H. Hibino, and Y. Taniyasu, "Towards scalable growth of hexagonal boron-nitride/graphene vertical heterostructure".

(179)Sep. 5, 2022, 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), Nagoya, Japan: MP1-6, H. Kageshima, T. Akiyama, and K. Shiraishi, "First-principles Study on Interfacial Silicon Emission during Silicon Thermal Oxidation".

(180) Oct. 18, 2022, 14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22 (ALC'22), Okinawa, Japan: 18p-1-7, H. Kageshima, S. Wang, and H. Hibino, "Theoretical study on origin of CVD growth direction difference in graphene/hBN heterostructure".

(181) Nov. 10, 2022, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), Tokushima, Japan: 10P-1-12, M. Ohi, F. Fukunaga, H. Murakami, H. Kageshima, Y. Ohno, and M. Nagase, "Resistive switching behavior in graphene-stacked junction".

(182) Oct. 24, 2023, 2023 International Workshop on Dielectric Thin Films for Future Electron Devices -- Science and Technology -- (2023 IWDTF), Japan: S5-2, H. Kageshima, T. Akiyama, and K. Shiraishi, "First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation".

(183)Oct. 24, 2023, 2023 International Workshop on Dielectric Thin Films for Future Electron Devices -- Science and Technology -- (2023 IWDTF), Kanazawa, Japan: P-1, R. Imamura and H. Kageshima, "Theoretical study on island edges in CVD growth of hBN".

(184)Nov. 16, 2023, 36th International Microprocesses and Nanotechnology Conference (MNC 2023), Hakodate, Japan: 16P-1-15, H. Murakami, F. Fukunaga, M. Ohi, K. Kubo, T. Nakagawa, H. Kageshima, Y. Ohno, and M. Nagase, "Twist angle dependence of graphene-stacked junction characteristics".

(185)Dec. 15, 2023, 54th IEEE Semiconductor Interface Specialists Conference (SISC 2023), San Diego, CA, USA: 9.3, K. Shiraishi, H. Kageshima, and A. Oshiyama, "First Principles Studies on Thermal Oxidation and Effects of Hydrogen Annealing at the Si/SiO2 (110) Interface toward less than 2nm Node CFET".

(186) (1)2024年7月29日, International Conference on Physics of Semiconductors 2024 (ICPS 2024), Ottawa, Ontario, Canada: Mo-P-064, T. Hayashi, H. Kageshima, J. Noborisaka, and K. Nishiguchi, "First-principles Calculations for Giant Valley Splitting in Stressed Silicon Thin Films".

(187)Jul. 30, 2024, International Conference on Physics of Semiconductors 2024 (ICPS 2024), Ottawa, Ontario, Canada: Tu-S4-3-2, H. Kageshima, T. Akiyama, and K. Shiraishi, "First-principles Study of Si Transport from Si-oxide/Si Interface into Oxide".

(188)Oct. 14, 2024, The 11th Asia-Pacific Workshop on Widegap Conductors (APWS 2024), Busan, Korea: MC3-3, T. Akiyama, H. Kageshima, and K. Shiraishi, "Structures and Electronic States of Nitrogen Incorporated 4H-SiC/SiO2 Interfaces: a First-Principles Study".

(189)Oct. 21, 2024, The 10th International Symposium on Surface Science (ISSS-10), Kita-Kyushu, Fukuoka, Japan: 3P74, R. Imamura and H. Kageshima, "First-Principles Analysis of Critical Size and Island Shape in hBN CVD Crystal Growth".

(190)Oct. 24, 2024, The 10th International Symposium on Surface Science (ISSS-10), Kita-Kyushu, Fukuoka, Japan: 5P34, H. Kageshima, T. Akiyama, and K. Shiraishi, "Atomic Scale Insights into SiO Transport Pathway in Si-Oxide Film Based on Theoretical Investigation of Medium Density Effects".

(191) Nov. 19, 2024, 15th International Symposium on Atomic Level Characterizations for New Materials and Devices '24 (ALC '24), Matsue, Shimane, Japan: P-51, S. Fukuda and H. Kageshima, "Theoretical Study on Initial Stage of Epitaxial Graphene Growth on SiC Si-face".

総合理工学部

自然科学研究科

島根大学